IXYS MCD310

MCC 310
MCD 310
ITRMS = 2x 500 A
ITAVM = 2x 320 A
VRRM = 800-2200 V
Thyristor Modules
Thyristor/Diode Modules
3
VRSM
VDSM
VRRM
VDRM
V
V
900
1300
1500
1700
1900
800
1200
1400
1600
1800
1
Version 1
Version 1
MCC 310-08io1
MCC 310-12io1
MCC 310-14io1
MCC 310-16io1
MCC 310-18io1
MCD 310-08io1
MCD 310-12io1
MCD 310-14io1
MCD 310-16io1
MCD 310-18io1
Symbol
Test Conditions
ITRMS, IFRMS
ITAVM, IFAVM
TVJ = TVJM
TC = 85°C; 180° sine
ITSM, IFSM
TVJ = 45°C;
VR = 0
òi2dt
(di/dt)cr
76
2
Type
Maximum Ratings
500
320
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
9200
9800
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
8000
8600
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
420 000
400 000
A2s
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
320 000
306 000
A2s
A2s
100
A/ms
TVJ = TVJM
repetitive, IT = 960 A
f =50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 1 A
non repetitive, IT = 320 A
diG/dt = 1 A/ms
5
4
3
6 7 1
5 4 2
3
1
5 4 2
MCC
MCD
Features
International standard package
Direct copper bonded Al2O3 -ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Keyed gate/cathode twin pins
●
●
500
A/ms
●
●
●
(dv/dt)cr
TVJ = TVJM;
VDR = 2/3 VDRM
RGK = ¥; method 1 (linear voltage rise)
1000
V/ms
PGM
TVJ = TVJM
IT = ITAVM
PGAV
120
60
20
W
W
W
VRGM
10
V
TVJ
TVJM
Tstg
-40...+140
140
-40...+125
°C
°C
°C
3000
3600
V~
V~
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
tP = 30 ms
tP = 500 ms
t = 1 min
t=1s
●
Applications
Motor control
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Contactless switches
●
●
●
●
●
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
●
●
Mounting torque (M5)
Terminal connection torque (M8)
Weight
Typical including screws
2.5-5/22-44 Nm/lb.in.
12-15/106-132 Nm/lb.in.
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
320
g
●
●
030
Md
1-4
MCC 310
MCD 310
Symbol
Test Conditions
IRRM
IDRM
TVJ = TVJM; VR = VRRM; VD = VDRM
VT, VF
IT, IF = 600 A; TVJ = 25°C
1.32
V
VT0
rT
For power-loss calculations only (TVJ = 140°C)
0.8
0.82
V
mW
VGT
VD = 6 V;
IGT
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
2
3
150
200
V
V
mA
mA
VGD
IGD
TVJ = TVJM;
VD = 2/3 VDRM
0.25
10
V
mA
IL
TVJ = 25°C; tP = 30 ms; VD = 6 V
IG = 0.45 A; diG/dt = 0.45 A/ms
200
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
150
mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 1 A; diG/dt = 1 A/ms
2
ms
tq
TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms
VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM
QS
IRM
TVJ = 125°C; IT, IF = 400 A, -di/dt = 50 A/ms
RthJC
per
per
per
per
RthJK
dS
dA
a
Characteristic Values
thyristor/diode; DC current
module
thyristor/diode; DC current
module
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
70
40
other values
see Fig. 8/9
mA
mA
typ. 200
ms
760
275
mC
A
0.112
0.056
0.152
0.076
K/W
K/W
K/W
K/W
12.7
9.6
50
mm
mm
m/s2
Fig. 1 Gate trigger characteristics
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
UL 758, style 1385,
Type ZY 180R (R = right for pin pair 6/7)
CSA class 5851, guide 460-1-1
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
MCC
MCD
Threaded spacer for higher Anode/
Cathode construction:
Type ZY 250, material brass
20
12
14
© 2000 IXYS All rights reserved
2-4
MCC 310
MCD 310
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 4 òi2dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus onstate current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
© 2000 IXYS All rights reserved
3-4
MCC 310
MCD 310
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
0.15
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
K/W
ZthJC
30°
DC
RthJC for various conduction angles d:
0.10
0.05
d
RthJC (K/W)
DC
180°C
120°C
60°C
30°C
0.112
0.113
0.114
0.115
0.115
Constants for ZthJC calculation:
i
0.000
10-3
10-2
10-1
100
101
102
s
t
0.20
1
2
3
Rthi (K/W)
ti (s)
0.003
0.0143
0.0947
0.099
0.168
0.456
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
K/W
ZthJK
30°
DC
0.15
RthJK for various conduction angles d:
0.10
d
RthJK (K/W)
DC
180°C
120°C
60°C
30°C
0.152
0.154
0.154
0.155
0.155
0.05
Constants for ZthJK calculation:
i
0
0.00
10-3
10-2
10-1
100
101
s
t
102
1
2
3
4
Rthi (K/W)
ti (s)
0.003
0.0143
0.0947
0.04
0.099
0.168
0.456
1.36
835
© 2000 IXYS All rights reserved
4-4