JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA608S TO-92S TRANSISTOR (PNP) FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 300 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -30 V Emitter-Base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-25V, IE=0 -1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -1 µA DC current gain hFE VCE=-6V, IC=-1mA VCE(sat) IC=-50mA, IB=-5mA fT VCE=-6V, IC=-10mA 180 MHz Cob VCB=-6V, f=1MHz 7 pF Collector-emitter saturation voltage Transition frequency Collector output capacitance 60 560 -0.5 CLASSIFICATION OF hFE Rank Range D E F G 60-120 100-200 160-320 280-560 V