JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage 50 V V (BR) CBO: Operating and storage junction temperature range 0. 95 0.15 1. 9 PCM: Unit: mm unless otherwise specified) Symbol Test Collector-base breakdown voltage V (BR) CBO IC = 100 µA, IE=0 50 V Collector-emitter breakdown voltage V (BR) CEO IC = 100 µA, IB=0 50 V Emitter-base breakdown voltage V (BR) EBO IE= 100 µA, IC=0 6 V Collector cut-off current ICBO VCB= 50 V , IE=0 0.1 µA Emitter cut-off current IEBO VEB= 6V , IC=0 0.1 µA hFE(1) conditions MIN MAX UNIT VCE= 6V, IC= 1mA 150 800 hFE(2) VCE= 6V, IC= 0.1mA 50 Collector-emitter saturation voltage VCE (sat) IC=100mA, IB= 10mA 0.3 V Base-emitter saturation voltage VBE (sat) IC= 100mA, IB= 10mA 1 V fT VCE= 6V, IC= 10mA Collector output capacitance Cob VCE=6V, IE=0, f=1MHz 4 pF Noise figure NF VCE=6V,IE=-0.1mA, f=1KHz, RG=2KΩ 15 dB DC current gain Transition frequency 180 MHz CLASSIFICATION OF hFE(1) Rank E F G Range 150~300 250~500 400~800 LE LF LG Marking