JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 1.EMITTER 2. COLLECTOR 3.BASE 1 2 3 unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μＡ , IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA， 5 V IB=0 IC=0 Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 μA Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 3 V， IC=0 0.1 μA hFE（1） VCE= 1 V, IC= 50m A 85 hFE（2） VCE= 1 V, IC= 500m A 50 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50 mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50 mA 1.2 V 300 DC current gain VCE= 6 V, IC=20mA Transition frequency fT 150 MHz f =30MHz CLASSIFICATION OF hFE(1) Rank B C D Range 85-160 120-200 160-300