JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR（ PNP ） TO—92 FEATURE Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 1.EMITTER 2. COLLECTOR 3.BASE 1 2 3 unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μＡ , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1 mA， IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA， IC=0 -5 V Collector cut-off current ICBO VCB= -40 V , IE=0 -0.1 μA Collector cut-off current ICEO VCE= -20 V , IB=0 -0.1 μA Emitter cut-off current IEBO VEB= - 3 IC=0 -0.1 μA V， hFE（1） VCE= -1 V, IC= -50m A 85 hFE（2） VCE= -1 V, IC= -500m A 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50 mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50 mA -1.2 V 300 DC current gain VCE=- 6 V, Transition frequency IC=-20mA fT 150 MHz f =30MHz CLASSIFICATION OF h FE(1) Rank B C D Range 85-160 120-200 160-300 TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015