JIANGSU BAS40WS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diode
SCHOTTKY DIODE
BAS40WS
SOD-323
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
1.70
1.30
Marking:
BAS40WS:43
0.30
·
·
·
1.00
Features
2.65
Unit:mm
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
BAS40
Unit
VRRM
VRWM
VR
40
V
Forward Continuous Current (Note 1)
IFM
200
mA
Power Dissipation (Note 1)
Pd
350
mW
IFSM
600
mA
RqJA
357
°C/W
Tj
-55 to +125
°C
TSTG
-65 to +150
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Surge Current (Note 1)
@ t < 1.0s
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
40
—
—
V
VF
—
—
380
1000
mV
Reverse Leakage Current
IR
—
20
200
nA
tp < 300ms, VR = 30V
Junction Capacitance
Cj
—
4.0
5.0
pF
VR = 0V, f =1.0MHz
Reverse Recovery Time
trr
—
—
5.0
ns
IF = IR = 10mA to IR = 1.0mA,
RL = 100W
Reverse Breakdown Voltage
Forward Voltage
Notes:
Test Condition
IR= 10mA
tp < 300ms, IF = 1.0mA
tp < 300ms, IF = 40mA
1. Valid Provided that terminals are kept at ambient temperature.
1 /1
SOD-323 PACKAGE OUTLINE DIMENSIONS
E
A2
b
D
A1
A
E1
L1
c
θ
0.20
L
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
1.050
1.250
0.041
0.049
A1
0.000
0.100
0.000
0.004
A2
1.050
1.150
0.041
0.045
b
0.200
0.400
0.008
0.016
c
0.080
0.150
0.003
0.006
D
1.200
1.400
0.047
0.055
E
1.600
1.800
0.063
0.071
E1
2.500
2.800
0.098
L
0.110
0.019REF
0.475REF
L1
0.250
0.450
0.010
0.018
θ
0°
8°
0°
8°