S T U/D2030P LS S amHop Microelectronics C orp. Aug 20 2005 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID -30V -20A R DS (ON) ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable. 32 @ V G S = -10V TO-252 and TO-251 P ackage. 55 @ V G S = -4.5V D D G D G S S TU S E R IE S TO-252AA(D-P AK) S G S TU S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter S ymbol Limit Unit Drain-S ource Voltage V DS -30 V Gate-S ource Voltage V GS 20 V Drain C urrent-C ontinuous @ Tc=25 C a -P ulsed ID -20 A IDM -60 A Drain-S ource Diode Forward C urrent IS -20 A Maximum P ower Dissipation @ Tc=25 C PD 50 W T J , T S TG -55 to 175 C Thermal R esistance, Junction-to-C ase R JC 3 C /W Thermal R esistance, Junction-to-Ambient R JA 50 C /W Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S 1 S T U/D2030P LS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -20V, V GS = 0V -1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS -25 V uA ON CHAR ACTE R IS TICS a Forward Transconductance -1.7 -3 V V GS = -10V, ID = -20A 27 32 m ohm V GS =-4.5V, ID = -10A 41 55 m ohm V DS = -10V, V GS = -10V V DS = -10V, ID= -10A -1 -30 A 14 S 950 PF 250 PF 170 PF 2.6 ohm 10 ns 22 ns 68.8 ns 38.5 ns 18.5 nC 9.6 nC nC nC DYNAMIC CHAR ACTE R IS TICS b Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS Gate resistance Rg S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge (10V) Total Gate Charge (4.5V) V DS =-15V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z b tD(ON) tr tD(OFF) V DD = -15V ID = -1 A V GS = -10V R GE N = 6 ohm tf V DS =-15V, ID = -20A V GS =-10V Qg Gate-S ource Charge Q gs 1.6 Gate-Drain Charge Q gd 5.8 2 S T U/D2030P LS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage -0.9 V GS = 0V, Is = -10A VSD -1.3 Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 25 20 20 V G S =-4.5V -I D , Drain C urrent (A) -I D , Drain C urrent(A) V G S =-4V V G S =-5V 15 V G S =-8V 10 V G S =-3V V G S =-10V 5 0 0 15 10 T j=125 C 5 0 0.5 1 2 1.5 2.5 3 0 -V DS , Drain-to-S ource Voltage (V ) 1.4 2.1 2.8 3.5 4.2 F igure 2. Trans fer C haracteris tics 60 R DS (ON) , On-R es is tance Normalized 1.6 50 R DS (on) (m W) 0.7 -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics V G S =-4.5V 40 30 V G S =-10V 20 10 0 -55 C 25 C 0 5 10 15 20 1.4 1.2 1.0 0.8 V G S =-4.5V I D =-10A 0.6 0.4 -55 25 V G S =-10V I D =-20A -25 0 25 50 75 100 125 T j( C ) -I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =-250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 120 20.0 25 C I D =-20A -Is , S ource-drain current (A) 100 R DS (on) (m W) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U/D2030P LS 80 75 C 60 125 C 40 25 C 20 0 125 C 10.0 75 C 1.0 0 2 4 6 8 10 0.4 -V G S , G ate- S ource Voltage (V ) 0.6 0.8 1.0 1.2 1.4 -V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D2030P LS C is s C , C apacitance (pF ) 1000 800 600 400 C os s 200 C rs s 0 0 5 10 V DS =-15V I D =-20A 8 6 4 2 0 10 15 20 25 30 0 3 6 -V DS , Drain-to S ource Voltage (V ) 9 12 15 18 21 24 Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 70 T D(on) 10 V DS =-15V ,ID=-1A 1 V G S =-10V 1 6 10 L im 1s 1 0m ms s DC V G S =-10V S ingle P ulse T c=25 C 0.1 R g, G ate R es is tance ( W) 10 10 10 0.03 60 100 300 600 it 50 N) Tf (O T D(off) S -I D , Drain C urrent (A) Tr 100 60 RD 220 S witching T ime (ns ) 6 -V G S , G ate to S ource V oltage (V ) 1200 1 10 30 60 -V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 5 F igure 10. Maximum S afe O perating Area S T U/D2030P LS V DD ton V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL 10% INVE R TE D 10% 6 G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 t2 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 6 10 S T U/D2030P LS 7 S T U/D2030P LS 5 95 7 84 L2 9 6.00 35 05 85 0.94 4 3 0 9 36 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 8 9 7 30 3 3 41 3 3 5 1 4 BSC 398 0.064 33 REF. S T U/D2030P LS TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 6.80 ±0.1 B0 K0 10.3 ±0.1 2.50 ±0.1 D0 D1 E E1 E2 P0 P1 P2 T ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 TO-252 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE M N W T H ψ 330 ψ330 ± 0.5 ψ97 ± 1.0 17.0 + 1.5 - 0 2.2 ψ13.0 + 0.5 - 0.2 9 K S 10.6 2.0 ±0.5 G R V