MCLDB3/MCLDC34/MCLDB4/MCLDB6 SILICON BIDIRECTIONAL DIAC S E M I C O N D U C T O R FEATURES DIAC The three layer, two terminal, axial lead, hermetically sealed diacs are Micro-MELF designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current, The breakover symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are intended for use in thyrisitors phase control , circuits for lamp dimming, universal motor speed control ,and heat control. JF's DB3/DC34/DB4/DB6 are bi-directional trigged diode designed to operate in conjunction with Triacs and SCR's MECHANICAL DATA Case: Micro-MELF glass case Weight: Approx. 0.03 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Value Parameters Symbols Units MCLDB3 PC Power Dissipation on Printed Circuit(L=10mm) TA=50 C ITRM Repetitive Peak on-state Current tp=10ms F=100Hz TSTG/TJ MCLDC34 MCLDB4 MCLDB6 mW 150 2.0 Storage and Operating Junction Temperature 2.0 2.0 A 16 C -40 to+125/-40 to 110 ELECTRICAL CHARACTERISTICS Value Symbols Parameters Test Condition MCLDB3 MCLDC34 MCLDB4 Units MCLDB6 Breakover Voltage (Note 2 ) C=22nF(Note 2) See diagram 1 Min Typ Max Breakover Voltage Symmetry C=22nF(Note 2) See diagram 1 Max +3 I=(IBO to IF=10mA) See Diagram 1 Min 5 VO Output Voltage (Note 1 ) See Diagram 2 Min 5 V IBO Breakover Current (Note1) C=22nF(Note 2) Max 100 mA See Diagram 3 Typ 1.5 mS VB=0.5 VBO max see diagram 1 Max 10 mA VBO I +VBO II - VBO I I + VI Dynamic Breakover Voltage (Note1) tr IB Rise Time (Note1) Leakage Current (Note1) 28 32 36 35 40 45 30 34 38 56 60 70 V +4 V 10 V Notes: 1.Electrical characteristics applicable in both forward and reverse directions. 2.Connected in parallel with the devices. 3-6 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM RATINGS AND CHARACTERISTIC CURVES MCLDB3/MCLDC34/MCLDB4/MCLDB6 DIAGRAM 2: Test circuit for output voltage DIAC DIAGRAM 1: Current-voltage characteristics +IF 10KW 500KW 220V 50Hz 10mA D.U.T R=20W VO 0.1mF DIAGRAM 3: Test circuit see diagram2 adjust R for IP=0.5A IBO IB 0.5 VBO -V +V IP 90% V VBO 10% -IF tr FIG.1-Power dissipation versus ambient temperature (maximum values) FIG.2-Relative variation of VBO versus junction temperature(typical values) P (mW) VBO(TJ) VBO(TJ=25 C) Tamb( C) FIG.3-Peak pulse current versus pulse duration (maximum values) ITRM(A) F=100Hz TJ initial=25 C tp(ms) 3-7 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM