JMnic Product Specification 2SA1643 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4327 ・Low collector saturation voltage APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -35 V VEBO Emitter-base voltage Open collector -7 V -7 A 25 W IC Collector current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1643 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -7 V Collector-emitter saturation voltage IC=-5A ;IB=-0.3A -0.5 V ICBO Collector cut-off current VCB=-50V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -10 μA hFE DC current gain IC=-5A ; VCE=-2V Transition frequency IE=1A ; VCE=-12V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 50 75 MHz JMnic Product Specification 2SA1643 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3