JMNIC 2SA1670

JMnic
Product Specification
2SA1670
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-3PML package
・Complement to type 2SC4385
APPLICATIONS
・Audio and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-6
A
IB
Base current
-3
A
PC
Collector power dissipation
60
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1670
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2 A;IB=-0.2 A
-1.5
V
ICBO
Collector cut-off current
VCB=-80V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-10
μA
hFE
DC current gain
IC=-2A ; VCE=-4V
Transition frequency
IC=-0.5A ; VCE=-12V
fT
CONDITIONS
MIN
TYP.
MAX
-80
UNIT
V
50
20
MHz
0.25
μs
0.5
μs
0.1
μs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-3A;RL=10Ω
IB1=-IB2=-0.3A
VCC=-30V
Fall time
2
JMnic
Product Specification
2SA1670
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3