JMNIC 2SB1658

JMnic
Product Specification
2SB1658
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Low collector saturation voltage
・High DC current gain
APPLICATIONS
・For audio frequency amplifier
and switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-30
V
VCEO
Collector-emitter voltage
Open base
-30
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current (DC)
-5
A
ICM
Collector current-Peak
-10
A
IB
Base current (DC)
-2
A
PT
Total power dissipation
Ta=25℃
0.1
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1658
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=-1A; IB=-50mA
-0.15
V
VCEsat-2
Collector-emitter saturation voltage
IC=-2A; IB=-100mA
-0.25
V
VCEsat-3
Collector-emitter saturation voltage
IC=-4A; IB=-200mA
-0.5
V
Base-emitter saturation voltage
IC=-1A; IB=-100mA
-1.5
V
ICBO
Collector cut-off current
VCB=-30V; IE=0
-0.1
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.1
μA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
150
hFE-2
DC current gain
IC=-4A ; VCE=-2V
50
Transition frequency
IC=-50mA ; VCE=-10V
95
MHz
Collector output capacitance
IE=0;f=1MHz ; VCB=-10V
100
pF
VBEsat
fT
COB
CONDITIONS
2
MIN
TYP.
MAX
-30
UNIT
V
600
JMnic
Product Specification
2SB1658
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3