JMNIC 2SC3297

Product Specification
www.jmnic.com
2SC3297
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Low saturation voltage
・High speed switching time
APPLICATIONS
・High current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
30
V
VCEO
Collector-emitter voltage
Open base
30
V
VEBO
Emitter-base voltage
Open collector
5
V
3
A
15
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
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Product Specification
www.jmnic.com
2SC3297
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter breakdown voltage
IC=10mA , IB=0
30
V
VCBO
Collector-base breakdown voltage
IC=1mA , IE=0
30
V
VEBO
Emitter-base breakdown voltage
IE=1mA , IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.2A
1.0
V
VBE
Base-emitter on voltage
IC=0.5A ; VCE=5V
1.0
V
ICBO
Collector cut-off current
VCB=30V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
70
hFE-2
DC current gain
IC=3A ; VCE=5V
20
Transition frequency
IC=0.5A ; VCE=5V
fT
CONDITIONS
JMnic
MIN
TYP.
MAX
UNIT
280
100
MHz
Product Specification
www.jmnic.com
2SC3297
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
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