JMNIC 2SC3214

JMnic
Product Specification
2SC3214
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High voltage ,high speed
APPLICATIONS
・For switching regulator and DC/DC
converter applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1200
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
5
A
ICM
Collector current-peak
8
A
IB
Base current
3
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance from junction to mounting base
JMnic
Product Specification
2SC3214
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
1200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=2.5A; IB=0.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2.5A; IB=0.5A
1.5
V
ICBO
Collector cut-off current
VCB=960V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE
DC current gain
IC=1.5A ; VCE=5V
2
MIN
10
TYP.
MAX
UNIT
JMnic
Product Specification
2SC3214
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3