Product Specification www.jmnic.com 2SC3465 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ・Fast switching speed APPLICATIONS ・For switching regulator applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1100 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V 12 A 160 W IC Collector current PT Total power dissipation Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ TC=25℃ Product Specification www.jmnic.com 2SC3465 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0; 1100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0; 7 V VCEsat Collector-emitter saturation voltage IC=6A;IB=1.2A 2.0 V VBEsat Base-emitter saturation voltage IC=6A;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=800V;IE=0 10 μA IEBO Emitter cut-off current VEB=7V;IC=0 10 μA hFE-1 DC current gain IC=0.8A ;VCE=5V 10 hFE-2 DC current gain IC=4A ;VCE=5V 10 Transition freuquency IC=0.8A ;VCE=10V 15 MHz Collector output capacitance IE=0 ;VCB=10V,f=1MHz 240 pF fT COB CONDITIONS hFE-1 classifications K L M 10-20 15-30 20-40 2 MIN TYP. MAX UNIT 40 Product Specification www.jmnic.com 2SC3465 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3