JMnic Product Specification 2SC3420 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High DC current gain ・Low saturation voltage ・High collector power dissipation APPLICATIONS ・Storobo flash applications ・Medium power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector- emitter voltage Open base 20 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 5 A ICM Collector current-peak 8 A IB Base current 1 A PC Collector power dissipation Ta=25℃ 1.5 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ JMnic Product Specification 2SC3420 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector cutoff current VCB=40V;IE=0 100 nA IEBO Emitter cutoff current VEB=8V;IC=0 100 nA V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.1A 1 V VBE Base-emitter voltage IC=4A ; VCE=2V 1.5 V hFE-1 DC current gain IC=0.5A ; VCE=2V 140 hFE-2 DC current gain IC=4A ; VCE=2V 70 COb Output capacitance IE=0; VCB=10V;f=1MHz 40 pF fT Transition frequency IC=0.5A ; VCE=2V, 100 MHz hFE-1 Classifications Y GR BL 140-240 200-400 300-600 2 20 V 600 JMnic Product Specification 2SC3420 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SC3420 Silicon NPN Power Transistors 4