JMnic Product Specification 2SC3447 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage and high reliability ・Fast switching speed. ・Wide ASO (Safe Operating Area) APPLICATIONS ・500V/5A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2 A PC Collector dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC3447 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.6A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 8 fT Transition frequency IC=0.6A ; VCE=10V 18 MHz COB Output capacitance IE=0;f=1MHz ; VCB=10V 80 pF 50 Switching times ton Turn-on time tstg Storage time tf VCC=200V; IC=4A IB1=0.8A;IB2=-1.6A; RL=50Ω Fall time hFE-1 classifications L M N 15-30 20-40 30-50 2 0.5 μs 3.0 μs 0.3 μs JMnic Product Specification 2SC3447 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SC3447 Silicon NPN Power Transistors 4