JMNIC MJE15028

Product Specification
www.jmnic.com
MJE15028
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type MJE15029
・High transition frequency
・DC current gain specified to 4.0 Amperes
hFE = 40 (Min) @ IC = 3.0 Adc
hFE = 20 (Min) @ IC = 4.0 Adc
APPLICATIONS
・Designed for use as high–frequency
drivers in audio amplifiers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
8
A
ICM
Collector current-Peak
16
A
IB
Base current
2
A
PD
Total power dissipation
Ta=25℃
2
TC=25℃
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance ; junction to case
2.5
℃/W
Rth j-A
Thermal resistance , junction to ambient
62.5
℃/W
Product Specification
www.jmnic.com
MJE15028
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA IB=0
VCEsat
Collector-emitter saturation voltage
IC=1A IB=0.1A
0.5
V
VBE
Base-emitter on voltage
IC=1A ; VCE=2V
1.0
V
ICBO
Collector cut-off current
VCB=120V; IE=0
10
μA
ICEO
Collector cut-off current
VCE=120V; IB=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.1A ; VCE=2V
40
hFE-2
DC current gain
IC=2A ; VCE=2V
40
hFE-3
DC current gain
IC=3A ; VCE=2V
40
hFE-4
DC current gain
IC=4A ; VCE=2V
20
Transition frequency
IC=0.5A;VCE=10V;f=10MHz
30
fT
CONDITIONS
2
MIN
TYP.
MAX
120
UNIT
V
MHz
Product Specification
www.jmnic.com
MJE15028
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3
Product Specification
www.jmnic.com
MJE15028
Silicon NPN Power Transistors
4