SEMICONDUCTOR BAV23C TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES ・Low Leakage Current. E B L L ・Repetitive Peak Reverse Voltage : VRRM≦250V. H 1 P VRM 250 V Reverse Voltage VR 200 V Maximum (Peak) Forward Current IFM 625 mA Maximum (Peak) Reverse Voltage Single diode loaded. Forward Current Double diode loaded. IF t = 1μs Surge Current (Square wave) t = 100μs IFSM t = 10ms J MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P M 3 1. ANODE 1 2. ANODE 2 3. CATHODE 225 2 1 mA 125 9 A 3 A 1.7 A Power Dissipation PD 250* mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range K UNIT P N SYMBOL RATING C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC 3 G A 2 D ・Low Capacitance : CT≦2pF. DIM A SOT-23 Marking Lot No. U4 Type Name Note : * Device mounted on a FR4 Printed-Circuit Board (PCB) ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL VF Forward Voltage IR Reverse Current TEST CONDITION MIN. TYP. MAX. IF=100mA - - 1.0 IF=200mA - - 1.25 VR=200V - - 0.1 VR=200V, Tj=150℃ - - 100 UNIT V μA Total Capacitance CT VR=0V, f=1MHz - - 2 pF Reverse Recovery Time trr IF=10mA, IR=10mA, IRM=1mA - - 50 ns 2009. 5. 15 Revision No : 1 1/2 BAV23C IF - VF IR - V R 102 REVERSE CURRENT IR (µA) FORWARD CURRENT IF (mA) 500 400 -40 C 150 C 300 200 25 C 85 C 100 0 0 0.2 0.4 0.6 0.8 1.0 1.2 101 1 85 C 10-1 10-2 25 C 10-3 10-4 10-5 10-6 1.4 150 C -40 C 0 50 FORWARD VOLTAGE VF (V) 100 250 IF - Ta 1.2 250 FORWARD CURRENT IF (mA) TERMINAL CAPACITANCE CT (pF) 200 REVERSE VOLTAGE VR (V) CT - VR 1 0.8 0.6 0.4 0.2 0 150 0 5 10 15 20 25 200 Double 100 50 0 30 Single 150 0 50 REVERSE VOLTAGE VR (V) 100 150 AMBIENT TEMPERATURE Ta ( C) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM INPUT 0.01µF DUT WAVEFORM 50Ω -6V 2kΩ 50Ω 0 OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) IF 0 0.1 I R IR 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2009. 5 .15 Revision No : 1 2/2