SEMICONDUCTOR BD135 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES D C E High Current. (Max. : 1.5A) F Low Voltage (Max. : 45V) DC Current Gain : hFE=40Min. @IC=0.15A G Complementary to BD136. H DIM A B C D E F G H J K L M N O P J K MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 A Base Current IB 0.5 A Collector Power Ta=25 Dissipation Tc=25 L Junction Temperature Storage Temperature Range 1.25 PC 10 Tj 150 Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC M N O 1 2 3 P 1. EMITTER 2. COLLECTOR 3. BASE MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.5 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX TO-126 W ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=30V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 A V(BR)CEO IC=30mA, IB=0 45 - - V hFE (1) IC=5mA, VCE=2V 25 - - hFE (2) IC=150mA, VCE=2V 40 - 250 hFE (3) IC=500mA, VCE=2V 25 - - VCE(sat) IC=500mA, IB=50mA - - 0.5 V Base-Emitter Voltage VBE VCE=2V, IC=500mA - - 1.0 V Transition Frequency fT VCE=5V, IC=50mA - 190 - MHz Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage 2003. 6. 16 Revision No : 0 1/1