SEMICONDUCTOR KDR357 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. CATHODE MARK L K H F ・Low Reverse Current : IR=5㎂(Max.) A ・Low Forward Voltage : VF(3)=0.43V(Typ.) 1 E FEATURES G B ・Small Package : USC. 2 J D C I DIM A MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VRM 45 V Reverse Voltage VR 40 V Maximum (Peak) Forward Current IFM 200 mA Average Forward Current IO 100 mA IFSM 1 A Power Dissipation PD 200* mW Junction Temperature Tj 125 ℃ Tstg -55～125 ℃ Maximum (Peak) Reverse Voltage Surge Current (10ms) Storage Temperature Range MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + B C D M M 0.30+0.06/-0.04 _ 0.05 1.70 + E MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + F G H I 1. ANODE 2. CATHODE J K L M _ 0.05 0.4 + 2 +4/-2 4~6 USC * : Mounted on a glass epoxy circuit board of 20×20mm, pad dimension of 4×4mm. Marking Lot No. UL Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.24 - VF(2) IF=10mA - 0.31 - VF(3) IF=100mA - 0.43 0.55 UNIT V Reverse Current IR VR=40V - - 5 μA Total Capacitance CT VR=0V, f=1MHz - 30 - pF 2009. 9. 7 Revision No : 5 1/2 KDR357 IR - V R 1,000.0 100 REVERSE CURRENT IR (uA) FORWARD CURRENT IF (mA) IF - V F Ta=75 C Ta=125 C Ta=25 C 10 Ta=125 C 100.0 Ta=75 C 10.0 1.0 Ta=25 C 0.1 1 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE VF (V) TERMINAL CAPACITANCE CT (pF) CT - V R 30 f=1MHz Ta=25 C 25 20 15 10 5 0 0 10 20 30 40 REVERSE VOLTAGE VR (V) 2009. 9. 7 Revision No : 5 2/2