SEMICONDUCTOR KDS123E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Low Forward Voltage B Fast Reverse Recovery Time Small Total Capacitance D G A 2 C H Ultra- Small Surface Mount Package DIM A B 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + D 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + E G H J ) C MAXIMUM RATING (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT VRM 80 V VR 80 V Maximum (Peak) Forward Current IFM 300* mA Average Forward Current IO 100* mA IFSM 2* A Power Dissipation PD 100 mW Junction Temperature Tj 150 Tstg -55 150 Maximum (Peak) Reverse Voltage Reverse Voltage Surge Current (10mS) Storage Temperature Range * Unit Rating. Total Rating=Unit Rating 0.50 _ 0.05 0.13 + J 3 1. CATHODE 2 D1 D2 2 1 2. ANODE 1 3. ANODE 2 / CATHODE 1 ESM 0.7 Marking Type Name US ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=100mA - - 1.2 V Reverse Current IR VR=80V - - 0.1 A Total Capacitance CT VR=6V, f=1MHz - - 3.5 pF 2007. 10. 31 Revision No : 0 1/3 KDS123E IF - VF 100 FORWARD CURRENT IF (mA) FORWARD CURRENT IF (mA) IF - VF Ta=25 C 10 D1, D3 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 D2, D4 1 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) FORWARD VOLTAGE VF (V) IR - VR IR - VR 1.2 1 REVERSE CURRENT IR (nA) REVERSE CURRENT IR (nA) 10 0 Ta=25 C 0.1 0.01 D1, D3 0.001 Ta=25 C 0.1 0.01 D2, D4 0.001 0 10 20 30 40 50 60 70 80 20 30 40 50 60 REVERSE VOLTAGE VR (V) CT - VR CT - VR f=1MHz Ta=25 C 1 D1, D3 0.1 5 10 REVERSE VOLTAGE VR (V) 10 0 0 TOTAL CAPACITANCE CT (pF) TOTAL CAPACITANCE CT (pF) Ta=25 C 1.2 1 10 15 20 25 30 35 REVERSE VOLTAGE VR (V) 2007. 10. 31 100 Revision No : 0 40 45 70 80 10 f=1MHz Ta=25 C 1 D2, D4 0.1 0 5 10 15 20 25 30 35 40 45 REVERSE VOLTAGE VR (V) 2/3 KDS123E POWER DISSIPATION P (mW) P - Ta 120 100 80 60 40 20 0 -40 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2007. 10. 31 Revision No : 0 3/3