SEMICONDUCTOR KDV215 TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. L K A Low Series Resistance : rS=0.4 (Typ.) 1 E High Capacitance Ratio : C2V/C25V=6.5(Typ.) G B CATHODE MARK FEATURES H F Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. 2 J D C I MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage DIM A ) SYMBOL RATING UNIT VR 30 V Peak Reverse Voltage VRM Junction Temperature Tj 125 Tstg -55 125 Storage Temperature Range 35 (RL=10 ) V MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + B C D M M 0.30+0.06/-0.04 _ 0.05 1.70 + E MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + F G H I 1. ANODE 2. CATHODE J K L M _ 0.05 0.4 + 2 +4/-2 4~6 USC Marking Type Name VA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Current Capacitance ) SYMBOL TEST CONDITION MIN. TYP. MAX. IR VR=30V - - 10 IR VR=30V, (Ta=60 ) - - 100 nA C2V VR=2V, f=1MHz 14.16 - 16.25 C25V VR=25V, f=1MHz 2.11 - 2.43 5.90 6.50 7.15 - 0.4 0.55 Capacitance Ratio C2V/C25V Series Resistance rS VR=5V, f=470MHz UNIT pF - Note : Available in matched group for capacitance to 2.5%. C(Max.)-C(Min.) 0.025 C(Min.) (VR=2~25V) 2005. 12. 7 Revision No : 0 1/2 KDV215 CT - VR rs - VR 0.8 f=1MHz Ta=25 C 50 SERIES RESISTANCE rs (Ω) CAPACITANCE CT (pF) 100 30 10 5 3 1 0 4 12 8 16 20 C (%) 0.4 0.2 1 3 5 10 30 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) CAPACITANCE CHANGE RATIO 0.6 0 28 24 f=470MHz Ta=25 C C - Ta 3 f=1MHz 2 VR =2V 1 14 0 25 20 -1 -2 -40 -20 0 20 40 60 80 AMBIENT TEMPERATURE Ta ( C) NOTE : 2005. 12. 7 C(%) = C(Ta) - C(25) C(25) Revision No : 0 100 2/2