SEMICONDUCTOR KF2N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF2N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. A C K DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N L D B FEATURES ・VDSS= 600V, ID= 1.9A H ・RDS(ON)=4.4Ω(Max) @VGS = 10V J ・Qg(typ) = 6.0nC N F MAXIMUM RATING (Tc=25℃) 1 SYMBOL RATING UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V @TC=25℃ @TC=100℃ Pulsed (Note1) 2 M 3 1. GATE 2. DRAIN 3. SOURCE 1.9 1.2 DPAK (1) A IDP 4.0 EAS 60 mJ EAR 2.3 mJ dv/dt 4.5 V/ns 40.3 W KF2N60I A H J C Tc=25℃ Drain Power Dissipation PD Derate above 25℃ 0.32 W/℃ M N K B Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID F D CHARACTERISTIC Drain Current E G P Tj 150 ℃ Tstg -55～150 ℃ E Maximum Junction Temperature Storage Temperature Range G Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 3.1 ℃/W Thermal Resistance, Junction-toAmbient RthJA 110 ℃/W F 1 L F 2 3 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A B _ 0.2 6.6 + _ 0.2 6.1 + C _ 0.3 5.34 + D _ 0.2 0.7 + E _ 0.3 9.3 + F _ 0.2 2.3 + G _ 0.1 0.76 + H _ 0.1 2.3 + J _ 0.1 0.5+ K _ 0.2 1.8 + L _ 0.1 0.5 + M N _ 0.1 1.0 + 0.96 MAX P _ 0.3 1.02 + PIN CONNECTION (KF2N60D/I) IPAK(1) D G S 2011. 3. 23 Revision No : 0 1/6 KF2N60D/I ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 600 - - V ID=250㎂, Referenced to 25℃ - 0.6 - V/℃ Static BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂ , VGS=0V Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 ㎂ Gate Threshold Voltage Vth VDS=VGS, ID=250㎂ 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA VGS=10V, ID=1A - 3.7 4.4 Ω - 6.0 - - 1.0 - - 2.8 - - 10 - - 20 - - 25 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time VDS=480V, ID=2A VGS=10V (Note4,5) VDD=300V ID=2A RG=25Ω (Note4,5) Turn-off Fall time tf - 20 - Input Capacitance Ciss - 270 - Output Capacitance Coss - 35 - Reverse Transfer Capacitance Crss - 3.9 - - - 2 - - 8 VDS=25V, VGS=0V, f=1.0MHz nC ns pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=2A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=2A, VGS=0V, - 290 - ns Reverse Recovery Charge Qrr dIs/dt=100A/㎲ - 0.9 - μC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L=28mH, IS=2A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤2A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%. Note 5) Essentially independent of operating temperature. Marking 1 1 KF2N60 001 D 2 KF2N60 001 I 2 1 PRODUCT NAME 2 LOT NO 2011. 3. 23 Revision No : 0 2/6 KF2N60D/I Fig1. ID - VDS Fig2. ID - VGS 10 1 10 1 Drain Current ID (A) Drain Current ID (A) VGS=10V VGS=7V 0 10 VGS=5V -1 10 TC=100 C 10 0 25 C -1 -2 10 10 0.1 10 1 2 100 4 Drain - Source Voltage VDS (V) On - Resistance RDS(ON) (Ω) Normalized Breakdown Voltage BVDSS 12.0 1.1 1.0 0.9 0 -50 50 100 10.0 8.0 VGS=6V VGS=10V 6.0 4.0 2.0 0 0 150 0.5 1.0 Junction Temperature Tj ( C ) 3.0 2 Normalized On Resistance Reverse Drain Current IS (A) 1 10 TC=100 C 25 C 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source - Drain Voltage VSD (V) 2011. 3. 23 Revision No : 0 2.0 2.5 3.0 Fig6. RDS(ON) - Tj 10 0 1.5 Drain Current ID (A) Fig5. IS - VSD 10 10 Fig4. RDS(ON) - ID VGS = 0V IDS = 250 0.8 -100 8 Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj 1.2 6 1.6 1.8 2.5 VGS =10V IDS = 1A 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 Junction Temperature Tj ( C) 3/6 KF2N60D/I Fig 7. C - VDS Fig8. Qg- VGS 12 Gate - Source Voltage VGS (V) Capacitance (pF) 1000 Ciss 100 Coss 10 Crss 1 0 5 10 15 20 25 30 35 ID=2A 10 8 6 VDS = 480V 4 2 0 0 40 1 2 3 4 5 6 7 8 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) Fig10. ID - Tj Fig9. Safe Operation Area 101 Operation in this 3.5 area is limited by RDS(ON) 3.0 Drain Current ID (A) Drain Current ID (A) 10µs 100µs 100 1ms 10ms 10-1 DC Tc= 25 C Tj = 150 C Single pulse 10-2 100 2.5 2.0 1.5 1.0 0.5 102 101 0 103 0 Drain - Source Voltage VDS (V) 25 50 75 100 125 150 Junction Temperature Tj ( C) Fig11. Transient Thermal Response Curve Transient Thermal Resistance 101 Duty=0.5 100 0.2 0.1 PDM 0.05 10-1 0.02 1 0.0 le g Sin t1 t2 lse Pu 10-2 10-5 - Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2011. 3. 23 Revision No : 0 4/6 KF2N60D/I Fig12. Gate Charge VGS 10 V Fast Recovery Diode ID 0.8 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig13. Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25Ω ID(t) VDS VGS 10 V VDD VDS(t) Time tp Fig14. Resistive Load Switching VDS 90% RL 0.5 VDSS VGS 10% 25 Ω VDS 10V 2011. 3. 23 VGS Revision No : 0 td(on) ton tr td(off) tf toff 5/6 KF2N60D/I Fig15. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) di/dt IRM IS 0.5 VDSS Body Diode Reverse Current VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V 2011. 3. 23 VGS Revision No : 0 Body Diode Forword Voltage drop 6/6