SEMICONDUCTOR KMB4D5DN60QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for load switch and Back light inverter. H T P D L G FEATURES A VDSS=60V, ID=4.5A. Drain-Source ON Resistance. RDS(ON)=56m (Max.) @ VGS=10V 8 RDS(ON)=77m (Max.) @ VGS=4.5V 5 B1 B2 1 MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING Drain Source Voltage VDSS Gate Source Voltage VGSS 60 V V 20 I D* 4.5 A Pulsed IDP 20 A Drain Source Diode Forward Current IS 3 A PD* 2 W Tj 150 Tstg -55~150 RthJA* 62.5 Drain Power Dissipation @Ta=25 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 UNIT DC@Ta=25 Drain Current 4 DIM A B1 B2 D G H L P T /W FLP-8 KMB4D5DN 60QA Note> *Surface Mounted on 1” 1” FR4 Board, t 10sec. PIN CONNECTION (TOP VIEW) S1 1 8 D1 1 8 G1 2 7 D1 2 7 S2 3 6 D2 3 6 G2 4 5 D2 4 5 2008. 5. 27 Revision No : 0 1/4 KMB4D5DN60QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) UNLESS OTHERWISE NOTED SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 60 - - V A Static Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250 A Drain Cut-off Current IDSS VGS=0V, VDS=48V - - 1 Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 3.0 VGS=10V, ID=4.5A - 46 56 VGS=4.5V, ID=3A - 64 77 VDS=5V, ID=4.5A - 11 - - 490 - - 45 - - 25 - - 10.4 - - 5.1 - - 2.3 - RDS(ON)* Drain-Source ON Resistance gfs* Forward Transconductance nA V m S Dynamic Input Capaclitance Ciss* Ouput Capacitance Coss* Reverse Transfer Capacitance Crss* Total Gate Charge VGS=10V VGS=4.5V VDS=30V, VGS=0V, f=1MHz Qg* VDS=30V, VGS=10V, ID=4.5A nC Gate-Source Charge Qgs* Gate-Drain Charge Qgd* - 2.2 - Turn-On Delay Time td(on)* - 12.4 - VDS=30V, VGS=10V - 34.5 - ID=4.5 , RG=3 - 30.7 - - 5.0 - - 0.7 1.0 tr* Turn-On Rise Time td(off)* Turn-Off Delay Time tf* Turn-Off Fall Time pF ns Source-Drain Diode Ratings VSDF* Source-Drain Forward Voltage Note> *Pulse Test : Pulse Width 300 2008. 5. 27 VGS=0V, IS=1A V , Duty Cycle 2% Revision No : 0 2/4 KMB4D5DN60QA Fig2. RDS(ON) - ID Fig1. ID - VDS 20 Drain Current ID (A) On-Resistance RDS(ON) (mΩ) 100 VGS=10V VGS=4.5V 15 VGS=5.0V VGS=4.0V 10 5 VGS=3.5V 2 1 3 4 80 VGS=4.5V 70 60 50 VGS=10V 40 30 20 0 0 0 Ta=25 C 90 5 5 Drain Current ID (A) VDS=5V 15 10 5 125 C 2 25 C 3 4 5 Drain-SourceOn-Resistance RDS(ON) (mΩ) 20 1 150 VGS=10V, ID=4.5A 120 90 60 30 0 -75 Gate Source Voltage VGS (V) -50 -25 75 100 125 150 100 Drain Current IS (A) Gate Threshold Voltage Vth (V) 50 VGS=VDS ID=250µA 3 2 1 10 125 C 25 C 1 0.1 0.01 0.001 -50 -25 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2008. 5. 27 25 Fig 6. IS - VSDF 4 0 -75 0 Junction Temperature Tj ( C ) Fig5. Vth - Tj 5 20 Fig4. RDS(on) - Tj Fig3. ID - VGS 0 15 Drain Current ID (A) Drain - Source Voltage VDS (V) 0 10 Revision No : 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Source-Drain Forward Voltage VSDF (V) 3/4 KMB4D5DN60QA Fig7. VGS - Qg 800 VDS=30V f=1MHz ID=4.5A 8 Capacitance C (pF) Gate to Source Voltage VGS (V) 10 Fig8. C - VDS 6 4 2 600 Ciss 400 200 Coss 0 Crss 0 0 2 4 6 8 10 12 0 Gate Charge Qg (nC) 10 20 30 40 Drain - Source Voltage VDS (V) Fig9. Safe Operation Area Drain Current ID (A) 102 Operation in this area is limited by RDS(ON) 101 200µs 100 1ms 10-1 10ms 100ms 1s 10s DC VGS= 10V SINGLE PULSE 10-2 10-2 10-1 100 101 102 103 Drain - Source Voltage VDS (V) Normalized Transient Thermal Resistance Fig9. Transient Thermal Response Curve 100 Duty Cycle = 0.5 0.2 10-1 0.1 0.05 10-2 PDM 0.02 t1 t2 t1 Single Pulse 10-3 10-4 1. Duty Cycle, D = t2 2. Per Unit Base = RthJA= 62.5 C/W 10-3 10-2 10-1 100 101 102 103 Square Wave Pulse Duration tw (sec) 2008. 5. 27 Revision No : 0 4/4