SEMICONDUCTOR KMB7D0DN40QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in PC, portable equipment and battery powered systems. H T P D FEATURES L G A VDSS=40V, ID=7A. Drain to Source on Resistance. RDS(ON)=25m (Max.) @VGS=10V RDS(ON)=45m (Max.) @VGS=4.5V 8 B1 B2 1 Maximum Ratings (Ta=25 SYMBOL PATING UNIT Drain to Source Voltage VDSS Gate to Source Voltage VGSS 40 20 V ID 7 A Pulsed IDP 36 A IS 1.7 A 2 W 1.44 W Ta=25 PD Ta=100 Tj -55~150 Storage Temperature Range Tstg -55~150 Thermal Resistance, Junction to Ambient RthJA 62.5 Maximum Junction Temperature FLP-8 V Ta=25 Drain to Source Diode Forward Current Drain Power Dissipation 4 MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 Unless otherwise noted) CHARACTERISTIC Drain Current 5 DIM A B1 B2 D G H L P T KMB7D0DN 40QA /W Note1) Surface Mounted on 1” 1” FR4 Board., t≤10sec PIN CONNECTION (TOP VIEW) S1 1 8 D1 1 8 G1 2 7 D1 2 7 S2 3 6 D2 3 6 G2 4 5 D2 4 5 2009. 9. 24 Revision No : 2 1/5 KMB7D0DN40QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) UNLESS OTHERWISE NOTED SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS ID=250 A, VGS=0V 40 - - V Drain Cut-off Current IDSS VDS=32V, VGS=0V - - 1 A Gate to Source Leakage Current IGSS VGS= - - 100 A Gate to Source Threshold Voltage Vth VDS=VGS, ID=250 A 1 1.8 2.5 VGS=10V, ID=6A - 20 25 VGS=4.5V, ID=5A - 35 45 VDS=5V, VGS=10V 15 - - A - 8 - S - 954 - - 201 - Drain to Source Breakdown Voltage RDS(ON) Drain to Source on Resistance ID(ON) On-State Drain Current gfs Forward Transconductance 20V, VDS=0V VDS=5V, V m Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 82 - Total Gate Charge Qg - 11.6 - Gate to Source Charge Qgs - 2.8 - Gate to Drain Charge Qgd - 2.2 - Turn-On Delay Time td(on) - 16.7 - VDD=20V, VGS=10V - 3.6 - ID=1A, RG=3.3 - 28.7 - - 10.1 - - 0.78 1.2 tr Turn-On Rise Time td(off) Turn-Off Delay Time VDS=20V, f=1MHz, VGS=0V VDS=20V, VGS=4.5V, ID=6A tf Turn-Off Fall Time pF nC ns Source to Drain Diode Ratings VSD Source to Drain Forward Voltage Note2) Pulse Test : Pulse width 2009. 9. 24 10 , Duty cycle Revision No : 2 IS=1.7A, VGS=0V V 1% 2/5 Fig1. ID - VDS 20 Drain Current ID (A) VGS=10V 4.0V 16 12 8 3.5V 4 VGS=3.0V 0 0 2 4 6 8 10 Drain to Source On Resistance RDS(ON) (mΩ) KMB7D0DN40QA Fig2. RDS(on) - ID 50 40 VGS=4.5V 30 VGS=10V 20 10 0 0 4 Drain to Source Voltage VDS (V) 8 2.0 Normalized Drain Source On Resistance RDS(ON) Drain Current ID (A) 20 Fig4. RDS(on) - Tj 20 16 12 25 C 8 Tj=-55 C 150 C 4 0 1 2 3 4 1.8 1.6 1.4 1.0 VGS=4.5V, ID=5A 0.8 0.6 0.4 0.2 -75 5 VGS=10V, ID=6A 1.2 Gate to Source Volatage VGS (V) -50 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C ) Fig6. IS - VSD Fig5. Vth - Tj 102 1.6 VDS=VGS, ID=250µA Reverse Drain Current IS (A) Normalized Gate to Source Threshold Voltage Vth 16 Drain Current ID (A) Fig3. ID - VGS 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 101 Tj=150 C Tj=25 C 100 Tj=-55 C 10-1 10-2 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C) 2009. 9. 24 12 Revision No : 2 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage VSD (V) 3/5 KMB7D0DN40QA Fig 7. C - VDS Fig 8. VGS - Qg 1500 Gate to Source Voltage VGS (V) 10 f=1MHz Capacitance (pF) 1200 Ciss 900 600 300 Coss Crss 0 0 10 20 30 VDS = 20V, ID = 6A 8 6 4 2 0 40 6 3 0 Drain to Source Voltage VDS (V) 12 9 15 Gate Charge Qg (nC) Fig9. Safe Operation Area Drain to Current ID (A) 102 100µs 101 M LI 100 RD S( IT 1ms ) ON 10ms 100ms 10-1 VGS= 10V SINGLE PULSE Tj= 25 C 10-2 10-2 DC 10-1 100 101 102 Drain to Source Voltage VDS (V) Fig10. Transient Thermal Response Curve 1 NORMALIZED EFFECTIVE TRANSIENT THER MAL RESISTANCE 10 1 0.5 0.2 0.1 10 -1 0.05 0.02 10 0.01 -2 PDM t1 SINGLE 10 t2 RθJA= 71.9 C/W -3 10 -4 -3 10 -2 10 -1 10 1 1 10 10 2 10 3 Square wave pulse Duration tw (sec) 2009. 9. 24 Revision No : 2 4/5 KMB7D0DN40QA Fig.7 Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig.8 Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 10 V VGS VGS 10% td(on) tr ton 2009. 9. 24 Revision No : 2 td(off) tf toff 5/5