SEMICONDUCTOR KMD7D5P40QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for battery protection circuit. H T P D L G FEATURES ・VDSS=-40V, ID=-7.5A. A ・Drain-Source ON Resistance. RDS(ON)=30mΩ(Max.) @ VGS=-10V 8 RDS(ON)=37mΩ(Max.) @ VGS=-4.5V 5 ・Super High Dense Cell Design B1 B2 1 4 MOSFET Maximum Ratings (Ta=25℃ Unless otherwise noted) CHARACTERISTIC SYMBOL PATING VDSS -40 V Gate Source Voltage VGSS ±20 V DC@Ta=25℃ I D* -7.5 A Pulsed IDP -30 A IS -30 A PD* 2.0 W Tj 150 ℃ Tstg -55~150 ℃ RthJA* 62.5 ℃/W Drain Source Diode Forward Current Drain Power Dissipation DC@Ta=25℃ Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 UNIT Drain Source Voltage Drain Current DIM A B1 B2 D G H L P T FLP-8 KMD7D5P 40QA Note : *Surface Mounted on 1”× 1” FR4 Board, t≤10sec PIN CONNECTION (TOP VIEW) S 1 8 D S 2 7 D S 3 6 D G 4 5 D 2008. 9. 17 Revision No : 1 1 8 2 7 3 6 4 5 1/4 KMD7D5P40QA ELECTRICAL CHARACTERISTICS (Ta=25℃) UNLESS OTHERWISE NOTED CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT -40 - - V Static Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250μA Drain Cut-off Current IDSS VDS=-40V, VGS=0V - - -10 μA Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±10 μA Gate Threshold Voltage Vth VDS=VGS, ID=-250μA -1.0 - -3.0 V VGS=-10V, ID=-3.8A - 24 30 VGS=-4.5V, ID=-3.8A - 29 37 gfs* VDS=-10V, ID=-3.8A - 1.2 - S Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz - 6 - kΩ Total Gate Charge Qg* - 27 - Gate-Source Charge Qgs* - 3.2 - Gate-Drain Charge Qgd* - 8.1 - Turn-On Delay Time td(on)* - 3.4 - VDD=-20V, VGS=-10V - 3.9 - ID=-7.5A, Rg=4.7Ω - 1.4 - - 7.7 - - - -1.2 Drain-Source ON Resistance Forward Transconductance RDS(ON)* mΩ Dynamic Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time tr* td(off)* VDS=-32V, VGS=-10V, ID=-7.5A tf* nC μs Source-Drain Diode Ratings Source-Drain Forward Voltage VSDF* VGS=0V, IDR=-7.5A, V Note) *Pulse Test : Pulse width ≤ 300㎲ , Duty cycle ≤ 2% 2008. 9. 17 Revision No : 1 2/4 KMD7D5P40QA Fig2. RDS(ON)-ID -4.5V -10V -4.0V -5.0V -25 -20 -3.5V -15 -10 VGS=-3.0V -5 0 0 -1 -2 -3 -4 -5 Drain Current ID (A) -15 -10 Ta=125 C -55 C -5 25 C 0 -2 -3 -4 -5 20 VGS=-10V 10 0 0 -10 -20 -30 -40 40 Common Source ID=-3.8A Pulse Test VGS=-4.5V 30 20 VGS=-10V 10 0 -75 -50 -25 0 25 50 75 100 125 150 Gate Source Volatage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Fig6. IS - VSDF -100 -5 Common Source Reverse Drain Current IS (A) Gate Threshold Voltage Vth (V) -1 VGS=VDS ID=-250µA -4 Pulse Test -3 -2 -1 -25 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2008. 9. 17 VGS=-4.5V Fig4. RDS(on) - Tj -20 -50 30 Fig3. ID - VGS VDS=VGS -25 Pulse Test 0 -75 Common Source Ta=25 C Pulse Test Drain - Current ID (A) -30 Common Source 0 40 Drain - Source Voltage VDS (V) Drain-Source On Resistance RDS(ON) (mΩ) Drain Current ID (A) -30 Drain-Source On Resistance RDS(ON) (mΩ) Fig1. ID - VDS Revision No : 1 -10 Tj=25 C Tj=125 C -1 -0.1 -0.01 -0.2 -0.4 -0.6 -0.8 -1 -1.2 Source - Drain Forward Voltage VSDF (V) 3/4 KMD7D5P40QA Fig8. Safe Operation Area Fig7. Qg - VGS -102 VDS = -32V ID = -7.5A -8 IT Drain Current ID (A) Gate - Source Voltage VGS (V) -10 -6 -4 -2 -101 6 12 18 24 100µs 1ms 10ms -100 100ms -10-1 0 0 LIM N) R DS(O VGS= -10V SINGLE PULSE Ta= 25 C -10-2 -10-2 30 1s 10s DC -10-1 Gate - Charge Qg (nC) -100 -101 -102 Drain - Source Voltage VDS (V) Fig9. Transient Thermal Response Curve 1 Normalized Effective Transient Thermal Resistanc 10 0 10 D = 0.5 0.2 -1 0.1 10 0.05 0.02 0.01 -2 10 PDM t1 t2 SINGLE 1. Duty Cycle D = t1/t2 2. Per unit Base = RthJA=62.5 C/W -3 10 -4 10 -3 10 10 -2 -1 10 0 10 10 1 2 10 10 3 Square wave pulse Duration tw (sec) 2008. 9. 17 Revision No : 1 4/4