Preliminary Data Sheet ICE10N73 Product Summary ICE10N73 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems ID TA=25oC 10A Max V(BR)DSS ID=250uA 730V Min rDS(on) VGS=10V 0.25Ω Typ Qg VDS=480V 82nC Typ D G S T0220 Standard Metal Heatsink ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Maximum ratings b 1=Gate, 2=Drain, 3=Source. , at Tj=25oC, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ID Tc=25oC 10 A Pulsed drain current ID, pulse Tc=25oC 35 A Avalanche energy, single pulse E AS ID=7.5A 280 mJ Avalanche current, repetitive I AR limited by Tjmax 7.5 A MOSFET dv/dt ruggedness dv/dt VDS=480V, ID=10A, Tj=125oC 50 V/ns Gate source voltage VGS Power dissipation Ptot Operating and storage temperature Tj, Tstg Mounting torque static ±20 AC (f>1Hz) ±30 Tc=25oC 208 -55 to +150 M 3 & 3.5 screws 60 V W o C Ncm a When mounted on 1inch square 2oz copper clad FR-4 b Preliminary Data Sheet – Specifications subject to change SP-10N73-000-1c 04/16/2013 1 Preliminary Data Sheet ICE10N73 Parameter Symbol Values Conditions Min Typ Max - - 0.6 Unit Thermal characteristics Thermal resistance, junctioncase a RthJC o Thermal resistance, junctionambient a RthJA leaded - - 62 Soldering temperature, wave soldering only allowed at leads T sold 1.6mm (0.063in.) from case for 10 s - - 260 Electrical characteristics Gate source leakage current o C b , at T =25oC, unless otherwise specified j Static characteristics Drain-source breakdown voltage V(BR)DSS VGS(th) Gate threshold voltage Zero gate voltage drain current C/W IDSS IGSS VGS=0 V, ID=250µA 730 760 - VDS=VGS, ID=250µA VDS=730V, VGS=0V, o Tj=25 C 2.5 3 3.5 - 0.5 5 VDS=730V, VGS=0V, o Tj=150 C - 20 - VGS=±20 V, VDS=0V - - 100 - 0.25 0.35 µA o VGS=10V, ID=5A, Tj=25 C Drain-source on-state resistance RDS (on) Gate resistance RG V nA Ω VGS=10V, ID=5A, o Tj=150 C - 0.7 - f=1 MHZ, open drain - 4 - - 2650 - - 943 - - 8 - - 20 - - 10 - - 5 - - 67 4.5 - Ω Dynamic characteristics Input capacitance Ciss Output capacitance Reverse transfer capacitance Coss Transconductance gfs Turn-on delay time Rise time td(on) Turn-off delay time td(off) Fall time tf SP-10N73-000-1c 04/16/2013 Crss tr VGS=0 V, VDS=25 V, f=1 MHz VDS>2*ID*RDS, ID=5A VDS=380V, VGS=10V, ID=10A, RG=4Ω (External) - pF S ns - 2 Preliminary Data Sheet ICE10N73 Parameter Symbol Conditions Values Unit Min Typ Max - 16 - - 30 - - 82 - - 5 - V - 1.0 1.2 V - 423 - ns - 8 - µC - 34 - A Gate charge characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg Gate plateau voltage Vplateau VDS=480 V, ID=10A, VGS=10 V nC Reverse Diode Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Peak reverse recovery current Irm SP-10N73-000-1c 04/16/2013 VGS=0V, IS=IF VRR=480V, IS=IF, diFIdt=100 A/µS 3 Preliminary Data Sheet ICE10N73 Transfer Characteristics Output Characteristics 35 35 VGS=10 to 7V 6V 30 ID - Drain Current (A) ID - Drain Current (A) 30 25 20 15 5V 10 25 20 15 10 TJ = 150˚C 5 5 25˚C 0 0 0 5 10 15 0 20 2 4 6 8 VGS - Gate-to-Source (V) VDS - Drain-to-Source Voltage (V) On Resistance vs Junction Temperature On Resistance vs Drain Current 4.0 RDS(on) - On State Resistance (Normalized) RDS(on) - On-State Resistance (mΩ) 500 450 400 350 300 VGS = 10V 250 200 150 100 3.5 VGS = 10V ID = 5A 3.0 2.5 2.0 1.5 1.0 0.5 50 0 0.0 0 5 10 15 20 25 ID - Drain current (A) 30 35 -50 9 1.3 VGS(th) - Gate Threshold Voltage (Normalized) 1.4 VDS = 480V 7 0 25 50 75 100 125 150 Gate Threshold Voltage vs Junction Temperature 10 8 -25 TJ - Junction Temperature (˚C) Gate Charge VGS - Gate-to-Source Voltage (V) 10 ID = 10A 6 5 4 3 2 1 1.2 1.1 ID = 250μA 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0 0 20 40 60 Qg - Total Gate Charge (nC) SP-10N73-000-1c 04/16/2013 80 100 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (˚C) 4 Preliminary Data Sheet ICE10N73 Capacitance Drain-to-Source Breakdown Voltage vs. Junction Temperature 1.2 C-Capacitance (pF) 10000 V(BR)DSS - Drain-to-Source Breakdown Voltage (Normalized) 100000 Ciss 1000 Coss 100 10 Crss 1 0 100 200 300 400 500 VDS - Drain-to-Source Votlage (V) ID = 1mA 1.0 0.9 0.8 -50 600 -25 0 25 50 75 100 TJ - Junction Temperature (˚C) 125 150 Transient Thermal Response, Junction-to-Case Maximum Rated Forward Biased Safe Operating Area 100 10us 10 100us 1ms 1 DC 0.1 RDS(on) Limit Package Limit Thermal Limit 0.01 r(t), Transient Thermal Resistance (Normalized) 1.00 Single Pulse, Tc = 25oC, Tj=150oC, VGS = 10V ID - Drain Current (A) 1.1 0.5 0.2 0.1 0.10 0.05 0.02 0.01 Single Pulse 0.00 1 10 100 VDS - Drain-to-Source Voltage (V) SP-10N73-000-1c 04/16/2013 1000 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 t - Time (s) 5 Preliminary Data Sheet ICE10N73 SP-10N73-000-1c 04/16/2013 6 Preliminary Data Sheet ICE10N73 SYMBOL A A1 A2 b b2 c c1 D D1 E E1 E2 e e1 H1 L L1 L2 ФP Q θ1 θ2 ФP1 DEP SP-10N73-000-1c 04/16/2013 MIN 4.35 1.20 2.35 0.65 1.00 0.34 0.33 14.70 8.60 9.96 10.10 10.00 6.10 12.70 — 3.55 2.60 5° 1° 1.40 0.05 COMMON DIMENSIONS MM INCH NOM MAX MIN NOM MAX 4.525 4.70 0.171 0.178 0.185 1.30 1.40 0.047 0.512 0.055 2.57 2.79 0.093 0.101 0.110 0.775 0.90 0.260 0.031 0.035 1.18 1.36 0.039 0.046 0.054 0.381 0.47 0.013 0.015 0.019 0.465 0.60 0.013 0.018 0.024 15.325 15.95 0.579 0.603 0.628 9.025 9.45 0.339 0.355 0.372 10.16 10.36 0.392 0.400 0.408 10.25 10.35 0.398 0.404 0.407 10.10 10.20 0.394 0.398 0.402 2.54 BSC 0.100 BSC 5.08 BSC 0.200 BSC 6.30 6.50 0.240 0.248 0.256 13.35 14.00 0.520 0.526 0.551 3.75 4.75 — 0.148 0.187 2.50 REF 0.098 REF 3.715 3.88 0.140 0.146 0.153 2.743 2.90 0.102 0.108 0.114 7° 9° 5° 7° 9° 3° 5° 1° 3° 5° 1.75 2.10 0.055 0.069 0.083 0.10 0.20 0.002 0.004 0.008 7 Preliminary Data Sheet ICE10N73 ICEMOS SUPERJUNCTION PATENT PORTFOLIO ICEMOS GRANTED PATENTS US7,429,772 US7,439,178 US7,446,018 US7,579,607 US7,723,172 US7,795,045 US7,846,821 US7,944,018 US8,012,806 US8,030,133 3D SEMI PATENTS LICENSED TO ICEMOS US7,041,560B2 US7,023,069B2 US7,364,994 US7,227,197B2 US7,304,944B2 US7,052,982B2 US7,339,252 US7,410,891 US7,439,583 US7,227,197B2 US6,635,906 US6,936,867 US7,015,104 US9,109,110 US7,271,067 US7,354,818 US7,052,982, US7,199,006B2 Note: additional patents in China, Korea, Japan, Taiwan, Europe have also been granted to IceMOS and 3D Semi for Superjunction MOSFETs with 70 additional Patent applications in process in the USA and the above listed countries. 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