SEMICONDUCTOR KTC2825D TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LED DRIVE APPLICATION FEATURES H A ・Adoption of MBIT processes. C J D ・Low collector-to-emitter saturation voltage. B ・Fast switching speed. E M N G K F MAXIMUM RATING (Ta=25℃) 1 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Vollector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6 V Collector Current IC 3 A Collector Current(Pulse) ICP 6 A Base Current IB 600 mA Ta=25℃ PC 1 W TC=25℃ PC 15 W Tj 150 ℃ Tstg -55～150 ℃ Collector Power Dissipation Junction Temperature Storage Temperature Range F 2 L 3 DIM A B C D E F G H J K L M N MILLIMETERS _ 0.2 6.6 + _ 0.2 6.1 + _ 0.2 5.0 + _ 0.2 1.1 + _ 0.2 2.7 + _ 0.1 2.3 + 1.0 MAX _ 0.2 2.3 + _ 0.1 0.5 + _ 0.1 1.0 + _ 0.1 0.5 + 0.95 MAX _ 0.1 0.9 + 1. BASE 2. COLLECTOR 3. EMITTER DPAK ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO VCB=40V, IE=0 - - 1 ㎂ Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 1 ㎂ hFE(1) VCE=2V, IC=100㎃ 200 - 400 hFE (2) VCE=2V, IC=3A 35 - - VCE(sat) (1) IC=2A, IB=100㎃ - 0.19 0.5 VCE(sat) (2) IC=360㎃, IB=2㎃ - - 0.3 VBE(sat) IC=2A, IB=100㎃ - 0.94 1.2 V VCB=10V, f=1㎒, IE=0 - 25 - ㎊ - 35 - - 470 - - 90 - DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance Turn-on Time Cob ton PW=20µs DC < = 1% INPUT Switching Time Storage Time VR 50 R8 I B2 100µ Fall Time 2010. 11. 11 tstg I B1 V Revision No : 1 tf -5V 10IB1=-10I B2 =I C =1A 25 nS 470µ 25V 1/3 KTC2825D I C - V BE I C - V CE 40mA 3.0 20mA 10mA 2.0 5mA 1.0 I B =0 0 0.4 0.8 1.2 COLLECTOR CURRENT I C (A) 1.6 2.0 1.6 1.2 0.8 0.4 0 0.4 0.2 1.6 1.4 1k 6mA 5mA 1.2 4mA 1.0 0.8 3mA 0.6 2mA 0.4 1mA 0.2 I B =0 2 4 6 8 10 12 14 16 18 VCE =2V 300 100 50 30 10 0.01 20 0.03 0.1 5 3 Ta=-25 C Ta=75 C Ta=25 C 0.3 1 COLLECTOR CURRENT I C (A) 2010. 11. 11 Revision No : 1 3 10 COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (mV) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) I C /I B =20 0.1 1 3 10 V CE(sat) - I C 10 0.03 0.3 COLLECTOR CURRENT I C (A) V BE(sat) - I C 1 1.2 500 COLLECTOR EMITTER VOLTAGE V CE (V) 0.1 0.01 1.0 h FE - I C 7mA 0.3 0.8 I C - V CE 8mA 0.5 0.6 BASE EMITTER VOLTAGE V BE (V) 1.8 0 2.4 0 2.0 VCE =2V 2.8 COLLECTOR-EMITTER VOLTAGE VCE (V) 2.0 0 COLLECTOR CURRENT I C (A) 60mA 4.0 0 3.2 80mA Ta=7 5 C 25 -25 C C 100mA DC CURRENT GAIN h FE COLLECOTR CURRENT I C (A) 5.0 1K I C /I B =20 500 300 100 50 Ta=75 C 30 Ta=25 C Ta=-25 C 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) 2/3 OUTPUW CAPACITANCE C ob (pF) C ob - V CB 100 f=1MHz 50 30 10 5 3 1 1 3 5 10 30 50 100 COLLECTOR BASE VOLTAGE V CB (V) 2010. 11. 11 Revision No : 1 200 COLLECTOR POWER DISSIPATION PC (W) KTC2825D PC - TC 20 15 10 5 1 0 25 50 75 100 125 150 TEMPERATURE (C ) 3/3