SEMICONDUCTOR KTC4075F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70~700. D 3 K ・Complementary to KTA2014F. 2 G A ・Low Noise : NF=1dB(Typ.), 10dB(Max.). 1 MILLIMETERS _ 0.05 0.6 + _ 0.05 0.8 + 0.38+0.02/-0.04 _ 0.05 0.2 + _ 0.05 1.0 + _ 0.05 0.35+ _ 0.05 0.1 + _ 0.05 0.15 + C ・Thin Fine Pitch Small Package. DIM A B C D E G J K CHARACTERISTIC J MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Collector Power Dissipation PC 50 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range 1. EMITTER 2. BASE 3. COLLECTOR TFSM Marking Type Name L h FE Rank ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 μA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA 70 - 700 - 0.1 0.25 V 80 - - MHz - 2.0 3.5 pF - 1.0 10 dB hFE (Note) DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) fT Transition Frequency Cob Collector Output Capacitance Noise Figure NF VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=1kHz, Rg=10kΩ Note : hFE Classification O(2):70～140, Y(4):120～240, GR(6):200～400, 2005. 4. 21 Revision No : 0 BL(8):350~700 1/3 KTC4075F h FE - I C I C - V CE 6.0 200 1k COMMON EMITTER Ta=25 C 5.0 3.0 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 240 2.0 160 1.0 120 0.5 80 I B =0.2mA 40 0 0 0 1 2 3 4 5 6 COMMON EMITTER 500 300 100 50 30 VCE =1V 10 0.1 7 0.3 1 COLLECTOR-EMITTER VOLTAGE V CE (V) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 0.05 C Ta=25 C Ta=-25 C 0.03 0.01 1 3 10 30 100 3 1 0.5 0.3 0.1 0.3 1 3 10 100 30 COLLECTOR CURRENT I C (mA) fT - IC I B - V BE 1k 3k 500 300 100 50 30 1 3 10 30 100 COLLECTOR CURRENT I C (mA) Revision No : 0 300 COMMON EMITTER I C /I B =10 Ta=25 C 5 0.1 300 COMMON EMITTER V CE =10V Ta=25 C 0.3 100 COLLECTOR CURRENT I C (mA) 3k 10 0.1 30 300 300 COMMON EMITTER VCE =6V 1k 300 100 Ta=1 00 C Ta=2 5 C Ta=25 C 0.3 BASE CURRENT I B (µA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) TRANSITION FREQUENCY f T (MHz) 00 =1 Ta 0.1 2005. 4. 21 10 0.3 0.1 10 V BE(sat) - I C COMMON EMITTER I C /I B =10 0.5 3 COLLECTOR CURRENT I C (mA) V CE(sat) - I C 1 VCE =6V Ta=100 C Ta=25 C Ta=-25 C 30 10 3 1 0.3 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE V BE (V) 2/3 KTC4075F h PARAMETER - V CE h PARAMETER - I C GR BL 10 5 3 BL Y O GR h oe xµ O GR 0.5 0.1 h re x10 3 5 10 30 50 BL 10 BL GR Y O O Y GR 0.1 0.5 BL GR h ie xkΩ Y h re x10 -4 1 h oe xµ 3 10 30 O 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION PC (mW) 30 0.3 -4 1 h fe Y O 1 BL Y O BL 100 3 1 0.5 0.3 COMMON EMITTER I C =2mA, Ta=25 C GR 300 Ω h PARAMETER GR Y 1k h fe h ie xkΩ 50 30 0.1 BL Y O 100 2k COMMON EMITTER VCE =12V, f=270Hz Ta=25 C h PARAMETER 1k 500 300 Ω 2k Pc - Ta 100 75 50 25 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2005. 4. 21 Revision No : 0 3/3