SEMICONDUCTOR KTC4373 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES A High Voltage : VCEO=120V. C H High Transition Frequency : fT=120MHz(Typ.). G J B E 1W(Monunted on Ceramic Substrate). Small Flat Package. DIM A B C D E F G H J K Complementary to KTA1661. D D K F MAXIMUM RATING (Ta=25 ) CHARACTERISTIC 1 SYMBOL RATING UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Base Current IB 160 mA PC 500 mW PC* 1 W Tj 150 F 2 3 MILLIMETERS 4.70 MAX _ 0.20 2.50 + 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 0.10 1.50 + 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 -55 150 Marking 2 PC* : KTC4373 mounted on ceramic substrate (250mm x0.8t) Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Lot No. C h FE Rank ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=120V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 120 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 5.0 - - V DC Current Gain hFE (Note) VCE=5V, IC=100mA 80 - 240 VCE(sat) IC=500mA, IB=50mA - - 1.0 V Base-Emitter Voltage VBE VCE=5V, IC=500mA - - 1.0 V Transition Frequency fT VCE=5V, IC=100mA - 120 - MHz VCB=10V, IE=0, f=1MHz - - 30 pF Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification O:80 1998. 6. 15 160, Y:120 Revision No : 2 240 1/2 KTC4373 1998. 6. 15 Revision No : 2 2/2