SEMICONDUCTOR KTC4377 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A FEATURES High DC Current Gain and Excellent hFE Linearity G 600(VCE=1V, IC=0.5A) J B E : hFE(1)=140 C H : hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A). DIM A B C D E F G H J K Low Saturation Voltage D D : VCE(sat)=0.5V(Max.) (IC=2A, IB=50mA). K Small Flat Package. F F 1W (Mounted on Ceramic Substrate). 1 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO 30 V VCES 30 VCEO 10 VEBO 6 DC IC 2 Pulse (Note 1) ICP 4 DC IB 0.4 Pulse (Note 1) IBP 0.8 PC 500 mW PC* 1 W Tj 150 Tstg -55 150 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current 3 Collector Power Dissipation Junction Temperature Storage Temperature Range 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER V SOT-89 V A A Marking h FE Rank Type Name Lot No. S MAXIMUM RATING (Ta=25 2 MILLIMETERS 4.70 MAX _ 0.20 2.50 + 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 0.10 1.50 + 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 Note 1 : Pulse Width 10mS, Duty Cycle 30% PC* : KTC4377 mounted on ceramic substrate (250mm2x0.8t) ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=30V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 100 nA Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 10 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 6 - - V VCE=1V, IC=0.5A 140 - 600 hFE(2) VCE=1V, IC=2A 70 140 - VCE(sat) IC=2A, IB=50mA - 0.2 0.5 V Base-Emitter Voltage VBE VCE=1V, IC=2A - 0.86 1.5 V Transition Frequency fT VCE=1V, IC=0.5A - 150 - MHz VCB=10V, IE=0, f=1MHz - 27 - pF hFE(1) (Note1) DC Current Gain Collector-Emitter Saturation-Voltage Cob Collector Output Capacitance Note : hFE(1) Classification 2003. 9. 16 A:140~240, B:200~330, Revision No : 4 C:300~450, D:420~600 1/2 KTC4377 h FE - I C I C - V CE 60 1k COMMON EMITTER 25 Ta=25 C 15 3.0 DC CURRENT GAIN hFE COLLECTOR CURRENT I C (A) 4.0 10 2.0 I B =5mA 1.0 Ta=100 C 500 300 Ta=25 C Ta=-25 C 100 50 30 COMMON EMITTER VCE =1V 0 0 0 1.0 2.0 3.0 4.0 5.0 10 0.01 6.0 0.03 0.1 0.3 C 00 =1 Ta 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.01 0.03 0.1 1 0.3 3 4.0 3.2 2.4 1.6 0 10 0 0.4 COLLECTOR POWER DISSIPATION PC (W) 10 DC 10 0m S * COLLECTOR CURRENT I C (A) I C MAX(CONTINUOUS) 1 * OP 0.3 ER AT IO N * SINGLE NONREPETITIVE PULSE Ta=25 C 0.1 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.03 0.01 S m 10 3 0.1 0.3 1 0.8 1.2 1.6 2.0 2.4 2.8 BASE EMITTER VOLTAGE V BE (V) SAFE OPERATING AREA * Ta=25 C Ta=-25 C 0.8 COLLECTOR-CURRENT I C (mA) I C MAX(PULSE) 10 COMMON EMITTER VCE =1V C I C /I B =10 Ta=100 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COMMON EMITTER 0.1 3 I C - V BE V CE(sat) - I C 0.5 1 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) 1 0.3 P C - Ta 1.2 1 MOUNTED ON CERAMIC SUBSTRATE (250mm 2 x0.8t) 2 Ta=25 C 1 1.0 0.8 0.6 2 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 3 10 30 100 COLLECTOR-EMITTER VOLTAGE V CE (V) 2003. 9. 16 Revision No : 4 2/2