SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9012. N K E G J D MAXIMUM RATING (Ta=25℃) UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Emitter Current IE -500 mA Junction Temperature Storage Temperature Range F 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR 625 PC* Collector Power Dissipation H F C RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC DIM A B C D E F G H J K L M N mW TO-92 400 Tj 150 ℃ Tstg -55～150 ℃ * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1 μA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA 64 - 246 - 0.1 0.25 V 0.8 1.0 V 140 - - MHz - 7.0 - pF hFE (Note) DC Current Gain VCE=1V, IC=50mA VCE(sat) IC=100mA, IB=10mA Base-Emitter Voltage VBE IC=100mA, VCE=1V Transition Frequency fT Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification D:64～91, 2010. 6. 25 VCB=6V, IC=20mA, f=100MHz E:78～112, Revision No : 2 VCB=6V, IE=0, f=1MHz F:96～135, G:118～166, H:144～202, I:176～246 1/1 KTC9013 hFE - IC 500 500 400 4.0 6.0 DC CURRENT GAIN hFE COMMON EMITTER Ta=25 C 3.0 2.0 300 200 1.0 0.5 100 I B =0.1mA 0 2 1 3 4 COLLECTOR POWER DISSIPATION PC (mW) VCE =1V 50 30 COMMON EMITTER 0.5 1 3 10 30 100 300 COLLECTOR CURRENT IC (mA) VCE(sat) - IC IB - VBE 2K 0.1 Ta =25 C Ta =-25 C Ta =100 C 0.05 0.5 1 3 10 30 100 300 1K 100 50 30 5 C 500 300 5 C 0.3 Ta =-2 0.5 1K COMMON EMITTER VCE =6V 1K Ta =2 COMMON EMITTER I C /I B =10 10 5 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (mA) 2010. 6. 25 Ta =25 C C Ta =-25 100 10 5 VCE =6V Ta =100 C COLLECTOR-EMITTER VOLTAGE VCE (V) 1 0.03 300 Ta = 100 C 0 BASE CURRENT IB (µA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (mA) IC - VCE (LOW VOLTAGE REGION) PC - Ta 700 600 Cu 500 400 Fe 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) Revision No : 2 2/2