SEMICONDUCTOR KTK5162S TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E B L H 1 P Drain-Source Voltage VDS 60 V Gate-Source Voltage VGSS ±20 V DC Drain Current ID 100 mA Drain Power Dissipation PD 200 mW Channel Temperature Tch 150 ℃ Storage Temperature Range Tstg -55～150 ℃ DIM A MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P J UNIT M K RATING P N SYMBOL C MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC 3 G A 2 D L FEATURES ・High Speed. ・Small Package. ・Enhancement-Mode. 1. SOURCE 2. GATE 3. DRAIN SOT-23 EQUIVALENT CIRCUIT D Marking Lot No. G KF Type Name S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL IGSS Gate Leakage Current TEST CONDITION VGS=±16V, VDS=0V MIN. TYP. MAX. UNIT - - ±1 μA V(BR)DSS ID=100μA, VGS=0V 60 - - V Drain Cut-off Current IDSS VDS=60V, VGS=0V - - 1 μA Gate Threshold Voltage Vth VDS=10V, ID=0.1mA 1 - 2.4 V Forward Transfer Admittance |Yfs| VDS=10V, ID=50mA 100 - - mS Drain-Source ON Resistance RDS(ON) ID=50mA, VGS=10V - 3 7.5 Ω Input Capacitance Ciss VDS=10V, VGS=0V, f=1MHz - 6.2 - pF Reverse Transfer Capacitance Crss VDS=10V, VGS=0V, f=1MHz - 1.5 - pF Output Capacitance Coss VDS=10V, VGS=0V, f=1MHz - 4.4 - pF - 0.021 - μS - 0.18 - μS Drain-Source Breakdown Voltage Turn-on Time Switching Time Turn-off Time 2009. 2. 10 Revision No : 1 ton toff VDD=25V, ID=50mA, VGS=0～10V 1/3 KTK5162S I D - V DS 0.20 6. 4 0.06 2.5V 0.04 0.02 0.4 0.6 0.8 0.12 0.10 0.08 0.06 0.04 0 1.0 0.3 5 C C Ta=75 Ta=2 0.05 0.03 0.01 5 COMMON SOURCE VGS =0 0.1 0.05 0.03 0.01 0.03 0.05 0.1 0.4 0.3 DRAIN CURRENT I D (A) COMMON SOURCE VGS =0 f=1MHz Ta=25 C 10 C iss 5 Coss 3 C rss 1 5 10 15 20 25 30 35 40 DRAIN-SOURCE VOLTAGE V DS (V) Revision No : 1 45 50 DRAIN SOURCE ON-STATE RESISTANCE R DS(ON) (Ω) 30 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 DIODE FORWARD VOTAGE VSD (V) C - V DS CAPACITANCE C (pF) 4 I F - V SD 0.1 2009. 2. 10 3 Y fs - I D 5 C Ta=-2 0 2 1 DRAIN-SOURCE VOLTAGE VGS (V) 0.3 0.5 0 DRAIN-SOURCE VOLTAGE V DS (V) COMMON SOURCE VDS =10V 0.5 0.14 Ta= 75 C Ta= 25 C Ta= -25 C 1 0.2 FORWARD CURRENT I F (A) FORWARD TRANSFER ADMITTANCE Yfs (S) 0 0.16 0.02 VGS =2.0V 0 COMMON SOURCE VDS =10V 0.18 V 3.0 C .0V Ta= -25 Ta= C 25 C Ta= 75 10 0V DRAIN CURRENT I D (A) 0.08 V COMMON SOURCE Ta=25 C 8.0 V DRAIN CURRENT I D (A) 0.10 I D - V GS R DS(ON) - I D 50 30 COMMON SOURCE VGS =4V Ta=25 C 10 5 0.3 0.5 1 3 5 10 30 DRAIN CURRENT I D (mA) 2/3 KTK5162S P D - Ta SWITCHING TIME t (ns) 1K DRAIN POWER DISSIPATION PD (mW) t - ID VDD=25V VGS =10V 500 300 t off 100 tf 50 30 tr 10 t on 5 0.01 0.03 0.05 0.1 350 300 250 200 150 100 50 0 DRAIN CURRENT I D (A) 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) SWITCHING TIME TEST CIRCUIT VDD=25V I D=50mA R L =500Ω VIN VOUT D PW=10µs D.U. < = 1% 10V VIN P.G KTK5162S 50Ω S 0V 2009. 2. 10 G Revision No : 1 3/3