KTK951S SEMICONDUCTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA LOW FREQUENCY / HIGH FREQUENCY AMPLIFIER APPLICATION E B L FEATURES L DIM A ・Low Gain Controlled Amplifier H A 1 P CHARACTERISTIC SYMBOL RATING UNIT Gate-Drain Voltage VGDO -22 V Gate-Source Voltage VGSO -22 V Gate Current IG 10 mA Drain Current ID 50 mA Drain Power Dissipation PD 150 mW Junction Temperature Tj 150 Tstg -55~150 Storage Temperature Range 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K ) D M N P J N C P Maximum Ratings (Ta=25 D G 3 E G B C High Transter Admittance 2 MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 1. SOURCE 2. DRAIN 3. GATE SOT-23 Marking IDSS Rank Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Lot No. J ) SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Gate-Source Breakdown Voltage V(BR)GSS VDS=0V, IG=-10㎂ -22 - - V Gate-Source Cut-off Voltage VGS(OFF) VDS=5V, ID=10㎂ 0 - -2.5 V VDS=0V, VGS=-15V - - 10 A VDS=5V, VGS=0V 12 - 40 mA yfs VDS=5V, VGS=0V, f=1kHz 20 30 - mS Ciss VDS=5V, VGS=0V, f=1MHz - 9 - pF IGSS Gate Leakage Currnet IDSS(Note) Drain Current Forward Transfer Admittance Input Capacitance Note : IDSS Classification C : 12~22, D : 18~30, E : 27~40 2009. 5. 15 Revision No : 0 1/3 KTK951S ID - VDS ID - VGS 40 16 -0.1V 12 -0.2V -0.3V -0.4V -0.5V -0.6V -0.7V 8 4 35 30 2 4 6 8 10 25 20 75 C 15 10 5 75 C -3 -2 -1.5 -1 -0.5 ID - VGS yfs - ID 25 20 15 IDSS=31mA 10 5 IDSS=17mA -2.5 -2 -1.5 -1 -0.5 0 100 100 IDSS=17mA 10 1 0.1 1 IDSS=31mA 10 100 DRAIN CURRENT ID (mA) VGS(off) - IDSS VDS=5V VGS=0V f=1kHz 10 100 DRAIN CURRENT IDSS (mA) Revision No : 0 0 VDS=5V f=1kHz yfs - IDSS 10 -2.5 -25 C 25 C GATE - SOURCE VOLTAGE VGS (V) GATE - SOURCE VOLTAGE VGS (V) FORWARD TRANSFER ADMITTANCE yfs (mS) -25 C 25 C DRAIN - SOURCE VOLTAGE VDS (V) VDS=5V 0 -3 2009. 5. 15 30 12 FORWARD TRANSFER ADMITTANCE yfs (mS) 0 VDS=5V IDSS=31mA 35 0 0 DRAIN CURRENT ID (mA) DRAIN CURRENT ID (mA) VGS=0V CUTOFF VOLTAGE VGS(off) (V) DRAIN CURRENT ID (mA) 20 10 VDS=5V ID=100µA 1 0.1 10 100 DRAIN CURRENT IDSS (mA) 2/3 KTK951S 100 Crss - VDS VGS=0V f=1MHz 10 1 1 10 DRAIN - SOURCE VOLTAGE VDS (V) 2009. 5. 15 Revision No : 0 100 REVERSE TRANSFER CAPACITANCE Crss (pF) INPUT CAPACITANCE Ciss (pF) Ciss - VDS 10 VGS=0V f=1MHz 1 1 10 100 DRAIN - SOURCE VOLTAGE VDS (V) 3/3