SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current E B L L ・Low Saturation Voltage H : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. 3 G A 2 D : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. 1 ・Complementary to the KTN2222S/2222AS. RATING CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO -5 V IC -600 mA PC 350 mW Tj 150 ℃ Tstg -55～150 ℃ Collector Power Dissipation (Ta=25℃) Junction Temperature Storage Temperature Range KTN2907S KTN2907AS UNIT J MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K MAXIMUM RATING (Ta=25℃) Collector Current P N C P DIM A B C D E G H J K L M N P 1. EMITTER 2. BASE 3. COLLECTOR -60 -40 V -60 V SOT-23 * Package Mounted On 99.5% Alumina 10x8x0.6mm. Marking Lot No. Type Name ZD Type Name Lot No. ZH MARK SPEC TYPE MARK KTN2907S Z D KTN2907AS Z H 2002. 4. 9 Revision No : 4 1/4 KTN2907S/AS ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL Collector Cut-off Current KTN2907S Collector Cut-off Current KTN2907AS Collector-Base Breakdown Voltage Collector-Emitter KTN2907S * Breakdown Voltage KTN2907AS Emitter-Base Breakdown Voltage KTN2907S KTN2907AS KTN2907S KTN2907AS DC Current Gain KTN2907S * KTN2907AS KTN2907S KTN2907AS KTN2907S KTN2907AS Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * ICEX VCE=-30V, VEB=-0.5V ICBO VCB=-50V, IE=0 V(BR)CBO IC=-10μA, IE=0 V(BR)CEO IC=-10mA, IB=0 V(BR)EBO IE=-10μA, IC=0 MIN. TYP. MAX. UNIT - - -50 nA - - -20 - - -10 -60 - - -40 - - -60 - - -5 - - 35 - - 75 - - 50 - - 100 - - 75 - - 100 - - 100 - 300 30 - - 50 - - nA V V V hFE(1) IC=-0.1mA, VCE=-10V hFE(2) IC=-1.0mA, VCE=-10V hFE(3) IC=-10mA, VCE=-10V hFE(4) * IC=-150mA, VCE=-10V hFE(5) * IC=-500mA, VCE=-10V VCE(sat)1 IC=-150mA, IB=-15mA - - -0.4 VCE(sat)2 IC=-500mA, IB=-50mA - - -1.6 VBE(sat)1 IC=-150mA, IB=-15mA - - -1.3 VBE(sat)2 IC=-500mA, IB=-50mA - - -2.6 200 - - MHz fT Transition Frequency TEST CONDITION VCE=-20V, IC=-50mA, f=100MHz V V Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 8 pF Input Capacitance Cib VBE=-2V, IC=0, f=1.0MHz - - 30 pF - - 45 - - 10 - - 40 - - 100 - - 80 - - 30 Turn-On Time ton Delay Time td Switching Rise Time tr Time Turn-Off Time toff Storage Time tstg Fall Time tf VCC=-30V, IC=-150mA IB1=-15mA VCC=-6V, IC=-150mA IB1=-IB2=-15mA nS * Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%. 2002. 4. 9 Revision No : 4 2/4 KTN2907S/AS -1000 h FE - I C 1K COMMON EMITTER Ta=25 C -800 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C - VCE I B =-40mA I B =-30mA I B =-20mA -600 I B =-10mA -400 I B =-5mA -200 0 -0.4 -0.8 -1.2 -1.6 VCE =-10V 500 300 Ta=75 C Ta=25 C Ta=-25 C 100 50 30 10 -0.5 -1.8 -1 -3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -0.6 -0.4 VCE(sat) -3 -10 -30 -100 -300 -1.2 Ta=-25 C -0.8 Ta=25 C -0.6 Ta=75 C -0.4 -0.2 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) I C - V BE f T - IC -100 -30 Ta=75 C C -10 -3 Ta=-25 C -1 -1K VBE(sat) -1.0 COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =-10V -0.3 1000 Ta=25 C VCE =10V 100 10 1 -0.1 -0.05 -0.2 -0.3 -300 COMMON EMITTER I C /IB =10 -1.4 0 -0.5 -1 -1K TRANSITION FREQUENCY f T (MHz) -500 -300 COLLECTOR CURRENT I C (mA) -1.6 -0.8 0 -0.5 -1 -100 V BE(sat) - I C COMMON EMITTER I C /I B =10 Ta= 25 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C -0.2 -30 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -1.0 -10 10 100 1K 3K COLLECTOR CURRENT I C (mA) -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 BASE-EMITTER VOLTAGE V BE (V) 2002. 4. 9 Revision No : 4 3/4 Cob - VCB Cib - V EB Pc - Ta 100 COMMON EMITTER f=1MHz, Ta=25 C 30 Cib 10 Cob 3.0 1.0 -0.1 -1.0 -10 -100 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 2002. 4. 9 COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR OUTPUT CAPACITANCE Cob (pF) COLLECTOR INPUT CAPACITANCE Cib (pF) KTN2907S/AS Revision No : 4 -300 500 400 (1) MOUNTED ON 99.5% ALUMINA 10x8x0.6mm (2) Ta=25 C (1) 300 200 (2) 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 4/4