SEMICONDUCTOR KU035N06P TECHNICAL DATA N-ch Trench MOS FET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications O C F E DIM MILLIMETERS _ 0.2 9.9 + A G B B Q C I D E FEATURES K P ・VDSS= 60V, ID= 160A M L ・Drain-Source ON Resistance : H J RDS(ON)=3.5mΩ(Max.) @VGS = 10V F G I D J N H N MAXIMUM RATING (Tc=25℃) K 1.46 L _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + M N CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V @TC=25℃ Drain Current @TC=100℃ ID 480* EAS 960 mJ EAR 12 mJ dv/dt 4.5 V/ns 167 W 1.33 W/℃ Tj 150 ℃ Tstg -55 ~ 150 ℃ Thermal Resistance, Junction-to-Case RthJC 0.75 ℃/W Thermal Resistance, Junction-to-Ambient RthJA 62.5 ℃/W Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25℃ PD Derate above 25℃ Maximum Junction Temperature Storage Temperature Range 3 1. GATE 2. DRAIN 3. SOURCE P Q A IDP Pulsed (Note1) 2 TO-220AB 160* 101 O 1 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + Thermal Characteristics * : Drain current limited by maximum junction temperature. Calculated continuous Current based on maximum allowable junction temperature PIN CONNECTION D G S 2011. 1. 12 Revision No : 0 1/7 KU035N06P ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 60 - - V ID=5mA, Referenced to 25℃ - 0.06 - V/℃ Static BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250μA, VGS=0V Drain Cut-off Current IDSS VDS=60V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.0 - 4.0 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA VGS=10V, ID=80A - 2.9 3.5 mΩ - 200 - - 35 - - 70 - - 110 - - 150 - - 460 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time VDS=48V, ID=80A VGS=10V (Note4,5) VDD=30V ID=80A RG=25Ω nC ns (Note4,5) Turn-off Fall time tf - 280 - Input Capacitance Ciss - 8400 - Output Capacitance Coss - 960 - Reverse Transfer Capacitance Crss - 520 - - - 150 - - 600 VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=150A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=80A, VGS=0V, - 65 - ns Reverse Recovery Charge Qrr dIs/dt=300A/μs - 0.18 - μC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =100μH, IS=80A, VDD=48V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤80A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking 1 KU 035N06P 001 2011. 1. 12 2 1 PRODUCT NAME 2 LOT NO Revision No : 0 2/7 KU035N06P Fig1. ID - VDS Fig2. ID - VGS 103 103 VDS = 2V VGS=7V, 10V 102 Drain Current ID (A) Drain Current ID (A) VGS=5V VGS=4.5V 101 100 10-2 10-1 100 101 102 100 C 25 C 101 100 102 2 3 4 3.0 1.3 VGS = 0V IDS = 5mA 1.1 1.0 0.9 0 100 50 150 2.5 2.0 1.5 1.0 0.5 0 -50 200 0 100 150 200 Fig6. IS - VSD - ௗ 103 Reverse Drain Current IS (A) 103 Reverse Drain Current IS (A) 50 Drain Current ID (A) Fig5. IS - VSD - 102 100 C 25 C 101 0.6 0.8 1.0 1.2 1.4 1.6 Source - Drain Voltage VSD (V) 2011. 1. 12 8 VGS=10V ID=65A Junction Temperature Tj ( C ) 100 0.4 7 Fig4. RDS(ON) - ID On - Resistance RDS(ON) (mΩ) Normalized Breakdown Voltage BVDSS Fig3. BVDSS - Tj 0.8 -50 6 Gate - Source Voltage VGS (V) Drain - Source Voltage VDS (V) 1.2 5 Revision No : 0 1.8 2.0 VGS=7V, 10V 102 VGS=4V VGS=3V VGS=0V 101 VGS=2V 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source - Drain Voltage VSD (V) 3/7 KU035N06P Fig7. RDS(ON) - ID Fig8. ID- Tj 180 160 Drain Current ID (A) On - Resistance RDS(ON) (mΩ) 16 12 8 VGS=4.5V VGS=5V 4 VGS=10V 0 0 50 100 150 200 250 300 140 120 100 80 60 40 20 0 0 350 25 75 100 125 150 175 200 Junction Temperature Tj ( ) Drain Current ID (A) Fig 9. C - VDS Fig10. Qg- VGS 105 12 Ciss 104 Coss 103 Crss Frequency=1MHz, VGS=0V 102 0 10 20 30 40 Gate - Source Voltage VGS (V) Capacitance (pF) 50 VDS=48V 10 8 6 4 2 0 0 40 80 120 150 200 240 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) Fig11. Safe Operation Area 103 Drain Current ID (A) 10us 102 100us 1ms 101 Operation in this area is limited by RDS(ON) 10ms DC 100 10 -1 Tc= 25 C Single nonrepetitive pulse 10-1 100 101 102 Drain - Source Voltage VDS (V) 2011. 1. 12 Revision No : 0 4/7 KU035N06P Transient Thermal Resistance Fig12. Transient Thermal Response Curve 100 Duty=0.5 0.2 10-1 PDM 0.1 t1 0.05 t2 0.02 0.01 - Duty Factor, D= t1/t2 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2011. 1. 12 Revision No : 0 5/7 KU035N06P Fig13. Gate Charge VGS 10 V Fast Recovery Diode ID 0.8 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig14. Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.8źVDSS 25Ω ID(t) VDS VGS 10 V VDD VDS(t) Time tp Fig15. Resistive Load Switching VDS 90% RL 0.5 VDSS VGS 10% 25 Ω VDS 10V 2011. 1. 12 VGS Revision No : 0 td(on) ton tr td(off) tf toff 6/7 KU035N06P Fig16. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) di/dt IRM IS 0.8 VDSS Body Diode Reverse Current VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V 2011. 1. 12 VGS Revision No : 0 Body Diode Forword Voltage drop 7/7