SEMICONDUCTOR MPSA56 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATIONS. B C FEATURES A Complementary to MPSA06. N E K CHARACTERISTIC ) J MAXIMUM RATING (Ta=25 G D SYMBOL RATING UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Emitter Current IE 500 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Storage Temperature Tstg -55 150 H ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC 2 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M L 1 C F F DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-80V, IE=0 - - -100 nA Emitter Cut-off Current ICEO VCE=-60V, IB=0 - - -100 nA V(BR)CEO IC=-1mA, IB=0 -80 - - V hFE(1) VCE=-1V, IC=-10mA 100 - - hFE(2) VCE=-1V, IC=-100mA 100 - - VCE(sat) IC=-100mA, IB=-10mA - - -0.25 V Base-Emitter Voltage VBE VCE=-1V, IC=-100mA - - -1.2 V Transition Frequency fT 50 - - MHz Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage 1999. 11. 30 Revision No : 3 VCE=-1V, IE=0, IC=-100mA 1/1