SEMICONDUCTOR PF2007DF8 TECHNICAL DATA Silicon Planar Type Diode For EMI Filtering and ESD Protection. F G E 1 4 FEATURES EMI/RFI filtering. H PAD GND A I ESD Protection to IEC 61000-4-2 Level 4. Low insertion loss. 8 B Good attenuation of high frequency signals. H Top View Low clamping voltage. Bottom View DIM A B C D E F G H I Low operating and leakage current. D Four elements in one package C Side View APPLICATIONS 1,8 : Filter channel 1 2,7 : Filter channel 2 3,6 : Filter channel 3 4,5 : Filter channel 4 Cell phone handsets. RF communications equipment. MAXIMUM RATING (Ta=25 CHARACTERISTIC MILLIMETERS _ 0.05 2.0 + _ 0.05 2.0 + _ 0.05 0.75 + _ 0.02 0.2 + 0.5 _ 0.05 0.23 + _ 0.05 0.35 + _ 0.05 1.2 + _ 0.05 0.6 + DFN-8 ) SYMBOL RATING UNIT Power Dissipation PD 300 mW Operating Temperature Tj -55 150 Tstg -55 150 Storage Temperature 5 EQUIVALENT CIRCUIT 200Ω FILTERn* FILTERn* 7.5pF 7.5pF GND ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5 V It=1mA 6 - - V VRWM=3V - - 0.1 A VBR Reverse Breakdown Voltage IR Reverse Leakage Current Cutoff Frequency f3dB VR=0V, ZSOURCE=50 , ZLOAD=50 - 210 - MHz Attenuation Frequency f25dB VR=0V, ZSOURCE=50 , ZLOAD=50 800 - 3,000 MHz Resistance R Between Input and Output - 200 - Capacitance C VR=2.5V, Between I/O Pins and GND - 15 - 2006. 8. 8 Revision No : 2 pF 1/2 PF2007DF8 S21 - f 25 5 20 -5 0 INSERTION LOSS (dB) CAPACITANCE CJ (pF) CJ - V R 15 10 5 -10 -15 -20 -25 -30 -35 -40 0 1 2 3 4 REVERSE VOLTAGE VR (V) 2006. 8. 8 Revision No : 2 5 -45 1 10 100 1000 6000 FREQUENCY (MHz) 2/2