SEMICONDUCTOR PG05BAUSM TECHNICAL DATA TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES E M Transient protection for data lines to B M IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) D G A Small package for use in portable electronics. J 2 Suitable replacement for Multi-Layer Varistors in ESD protection applications. 3 1 Protects one I/O or power line. Low clamping voltage. H L C Low leakage current. N N K DIM A B C D E G H J K L M N MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + 0.3+0.10/-0.05 _ 0.20 2.10 + 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 0.42 0.10 MIN APPLICATIONS Cell phone handsets and accessories. 1. (TVS) D1 CATHODE Microprocessor based equipment. 2. (TVS) D2 CATHODE Personal digital assistants (PDA’s) 3. COMMON ANODE Notebooks, desktops, & servers. Portable instrumentation. USM Pagers peripherals. MAXIMUM RATING (Ta=25 CHARACTERISTIC Marking ) SYMBOL RATING UNIT PPK 200 mW Junction Temperature Tj 150 Storage Temperature Tstg -55 150 Total Power Dissipation Lot No. BA Type Name 3 D1 D2 2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5 V 6.46 - 7.14 V VBR Reverse Breakdown Voltage 1 It=5mA Reverse Leakage Current IR VRWM=5V - - 0.5 A Junction Capacitance CJ VR=0V, f=1MHz - 3 - pF 2008. 9. 8 Revision No : 3 1/2 PG05BAUSM POWER DERATION CURVE 1K 110 RATED POWER OR IPP (%) PEAK PULSE POWER PP P (W) NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME 100 10 1 10 100 90 80 70 60 50 40 Peak Pulse Power 8/20us 30 20 10 0 Average Power 0 100 PULSE DURATION tP (µs) 25 50 75 150 CJ - VR 4 110 (pF) Waveform Parameters : tr=8µs td=20µs 100 90 80 70 60 50 40 CAPACITANCE CJ PEAK PULSE CURRENT IPP (%) 125 AMBIENT TEMPERATURE Ta ( C) PULSE WAVEFORM e -t td=lpp/2 30 20 10 0 0 5 10 15 20 TIME (µs) 2008. 9. 8 100 Revision No : 3 25 30 3 2 1 0 0 1 2 3 4 5 REVERSE VOLTAGE VR (V) 2/2