Diodes SMD Type Silicon Epitaxial Planar Type 1SS306 Unit: mm Features Low forward voltage :VF(2) = 0.9 V(Typ) Fast reverse recovery time :trr = 30 ns (Typ) Small total capacitance :CT = 1.5 pF(Typ) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VRM 250 V VR 200 V Average forward current * IO 100 mA Maximum (peak) forward current * IFM 300 mA Surge current (10 ms) * Maximum (peak) reverse voltage Reverse voltage IFSM 2 A Power dissipation P 150 mW Junction Temperature Tj 125 Storage Temperature Tstg -55 + 125 * Unit rating.Total rating = Unit rating X1.5 Electrical Characteristics Ta = 25 Parameter Symbol Forward voltage Reverse current Typ Max VF(1) IF = 1 mA 0.72 1.0 VF(2) IF = 100mA 0.9 1.2 IR(1) VR = 50 V 0.1 IR(2) VR = 200 V 1.0 Total capacitance Ct Reverse recovery time trr Test Conditions VR = 0, f = 1.0 MHz Min Unit V A 1.5 3.0 pF 30 60 ns Marking Marking A3 www.kexin.com.cn 1