Diodes SMD Type Silicon Epitaxial Planar Diode 1SS379 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small total capacitance: CT=3.0pF (Typ.) 1 0.55 Low reverse current: IR=0.1nA(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 Low forward voltage :VF=1.0V(Typ.) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VRM 85 V Maximum (peak) reverse voltage Reverse voltage VR 80 V Average forward current * IO 100 mA Maximum (peak) forward current * IFM 300 mA Surge current (10 ms) * IFSM 2 A P 150 mW Power dissipation Junction Temperature Tj 125 Storage Temperature Tstg -55 + 125 * Unit Rating. Total Rating=Unit Rating X0.7 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit V Forward voltage VF(1) IF = 100mA 1.0 1.3 Reverse current IR VR = 80V 0.1 10 A Total capacitance CT VR = 0, f = 1.0 MHz 3.0 6.0 pF Marking Marking P9 www.kexin.com.cn 1