KEXIN 2SC1653

Transistors
IC
SMD Type
NPN Silicon Epitaxial Transistor
2SC1653
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
High voltage VCEO : 130V
+0.1
1.3-0.1
+0.1
2.4-0.1
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA)
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
150
V
Collector-emitter voltage
VCEO
130
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
50
mA
power dissipation
PD
150
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = 130V, IE=0
Testconditons
Min
Typ
0.1
A
Emitter cutoff current
IEBO
VEB = 5V, IC=0
0.1
A
DC current gain *
hFE
VCE =3V , IC = 15mA
90
200
VCE =3V , IC = 1mA
70
180
400
Collector-emitter saturation voltage *
VCE(sat) IC = 50mA , IB = 5mA
0.1
0.3
Base-emitter saturation voltage *
VBE(sat) IC = 50mA , IB = 5mA
0.73
1.0
Output capacitance
Cob
Transiston frequency
* Pulse test: tp
fT
350 ìs; d
V
V
VCB = 10V , IE = 0 , f = 1.0MHz
2.3
pF
VCE = 10V , IE = -10mA
120
MHz
0.02.
hFE Classification
Marking
hFE
N2
90
180
N3
135
270
N4
200
400
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Transistors
IC
SMD Type
2SC1653
Typical Characteristics
Fig.1 Total Power Dissipation vs.
Ambient Temperature
Fig.2 Collector Current vs.
Collector to Emitter Voltage
Fig.3 Collector Current vs.
Base to Emitter Voltage
Fig.4 Collector Current vs.
Collector to Emitter Voltage
Fig.5 DC Current Gain vs.
Collector Current
2
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Transistors
IC
SMD Type
2SC1653
Fig.6 Base And Collector Saturation
Voltage vs. Collector Current
Fig.7 Gain Bandwidth Product vs.
Emitter Current
Fig.8 Input And Output Capacitance vs.
Reverse Voltage
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