Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SC2404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High transition frequency fT 0.55 Optimum for RF amplification of FM/AM radios +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Mini type package, allowing downsizing of the equipment and +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 automatic insertion through the tape packing and the magazine packing 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Collector current IC 15 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Collector-base voltage VCBO IC = 10 ìA, IE = 0 30 Emitter-base voltage VEBO IE = 10 ìA, IC = 0 3 Base-emitter voltage VBE VCB = 6 V, IE = -1 mA Forward current transfer ratio hFE VCB = 6 V, IE = -1 mA 65 450 Transition frequency Typ Max Unit V V 0.72 V 260 fT VCB = 6 V, IE = -1 mA, f = 100 MHz Reverse transfer capacitance Cre VCB= 6 V, IE = -1 mA, f = 10.7 MHz 0.8 Power gain GP VCB= 6 V, IE = -1 mA, f = 100 MHz 24 dB Noise figure NF VCB= 6 V, IE = -1 mA, f = 100 MHz 3.3 dB 650 MHz 1.0 pF hFE Classification U Marking Rank C D hFE 65 160 100 260 www.kexin.com.cn 1