KEXIN 2SC3326

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC3326
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA).
Low on resistance: RON = 1
0.55
High emitter-base voltage: VEBO = 25 V (min).
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
(typ.) (IB = 5 mA).
+0.05
0.1-0.01
+0.1
0.97-0.1
High DC current gain: hFE = 200 1200.
0-0.1
+0.1
0.38-0.1
Small package.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
25
V
Collector current
IC
300
mA
Base current
IB
60
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Tstg
-55 to +125
Storage temperature range
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1
Transistors
IC
SMD Type
2SC3326
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
Emitter cut-off current
IEBO
VEB = 25 V, IC = 0
DC current gain
hFE
VCE = 2 V, IC = 4 mA
VCE (sat) IC = 30 mA, IB = 3 mA
Collector-emitter saturation voltage
Min
Typ
200
Max
Unit
0.1
ìA
0.1
ìA
1200
0.042
0.1
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 4 mA
0.61
V
Transition frequency
fT
VCE = 6 V, IC = 4 mA
30
MHz
VCB = 10 V, IE = 0, f = 1 MHz
4.8
Collector output capacitance
Cob
Switchingtime Turn-on time
ton
160
ns
tstg
500
ns
tf
130
ns
Storage time
Fall time
hFE Classification
CC
Marking
2
Testconditons
Rank
A
B
hFE
200 700
350 120
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pF