Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC4782 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 Mini type package, allowing downsizing of the equipment and automatic 0.55 Low collector to emitter saturation voltage VCE(sat). +0.1 1.3-0.1 +0.1 2.4-0.1 High-speed switching. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 insertion through the tape packing and the magazine packing. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Peak collector current ICP 300 mA Collector current IC 200 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type 2SC4782 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit Collector cutoff current ICBO VCB = 20V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 2V, IC=0 0.1 ìA Forward current transfer ratio hFE VCE = 10 V, IC = 1 mA 40 200 Collector-emitter saturation voltage VCE(sat) IC = 10mA , IB = 1mA 0.17 0.25 V Base-emitter saturation voltage VBE(sat) IC = 10mA , IB = 1mA 0.76 1.0 V Transition frequency fT VCB = 10 V, IE = -1 mA, f = 200 MHz Reverse transfer capacitance Cre VCB = 10 V, IE = -1 mA, f = 10.7 MHz Turn-on time ton Turn-off time toff Storage time tstg Refer to the measurment circuit hFE Classification DV Marking 2 Min Rank P Q R hFE 40 80 60 120 90 200 www.kexin.com.cn 200 500 2 MHz 4 pF 17 ns 15 ns 7 ns