Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1615 Features World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current (DC) IC 1 A Collector Current (pulse) *1 Total power dissipation at 25 Ambient Temperature *2 Junction temperature Storage temperature * 1Pulse Test PW 10ms, Duty Cycle IC 2 A PT 2.0 W Tj 150 Tstg -55 to +150 50%. *2 When mounted on ceramic substrate of 16 cm2X 0.7 mm Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 60 V, IE = 0 A Testconditons Min 100 nA Emitter cutoff current IEBO VEB = 6.0 V, IC = 0 A 100 nA hFE VCE = 2.0 V, IC = 100 mA 290 600 Collector saturation voltage * VCE(sat) IC = 1 A, IB = 50 mA 0.15 0.3 V Base saturation voltage * VBE(sat) IC = 1 A, IB = 50 mA 0.9 1.2 V DC current gain * Base-emitter voltage * VBE Gain bandwidth product fT Output capacitance * Pulsed: PW Cob 350 ìs, duty cycle 135 Typ VCE = 2.0 V, IC = 50 mA 600 VCE = 2.0 V, IE = -100 mA 80 VCB = 10 V, IE = 0, f = 1.0 MHz 700 mV 160 MHz 19 pF 2% hFE Classification Marking GM GL GK hFE 135 270 200 400 300 600 www.kexin.com.cn 1