KEXIN 2SD1757K

Transistors
IC
SMD Type
Power Transistor
2SD1757K
SOT-23
Features
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA).
0.4
3
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
Optimal for muting.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
6.5
V
Collector current *
IC
0.5
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=50ìA
30
V
Collector-emitter breakdown voltage
BVCEO
IC=1mA
15
V
Emitter-base breakdown voltage
BVEBO
IE=50ìA
6.5
V
Collector cutoff current
ICBO
VCB=20V
0.5
ìA
Emitter cutoff current
IEBO
VEB=4V
0.5
ìA
0.4
V
VCE(sat) IC/IB=500mA/50mA
Collector-emitter saturation voltage
DC current transfer ratio
hFE
Output capacitance
fT
Transition frequency
Cob
VCE=3V, IC=100mA
0.1
120
560
VCE=5V, IE= -50mA, f=100MHz
150
MHz
VCB=10V, IE=0A, f=1MHz
15
pF
hFE Classification
AA
Marking
Rank
Q
R
S
hFE
120 270
180 390
270 560
www.kexin.com.cn
1