Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SD2324 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Contains a diode between colletor and emitter. 0.4 3 Low saturation voltage. 1 Large current capacity. 0.55 Contains a bias resistor between base and emitter. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Small-sized package facilitating the realization of +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 high-density, small-sized hybrid ICs. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage, With Zener diode (11±3V) Parameter VCBO 20 V Collector-emitter voltage, With Zener diode (11±3V) VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 0.8 A Collector current (pulse) ICP 2 A mW Collector dissipation PC 200 Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit 1.0 ìA Collector cutoff current IcBO VCB = 15V , IE = 0 DC current Gain hFE VCE = 2V , IC = 0.5A fT VCE = 2V , IC = 0.5A 150 MHz Cob VCB = 10V , f = 1MHz 15 pF Gain bandwidth product Output capacitance 70 Collector-emitter saturation voltage VCE(sat) IC = 500mA , IB = 10mA 0.16 0.3 V Base-emitter saturation voltage VBE(sat) IC = 500mA , IB = 10mA 0.85 1.2 V Collector-to-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 20 V IC = 10ìA , RBE = 20 V IC = 10mA , RBE = 15 Collector-to-emitter breakdown voltage V(BR)CEO Diode forward voltage VF Base-emitter resistance RBE IF = 0.5A 1.5 1 V kÙ Marking Marking BN www.kexin.com.cn 1