Transistors SMD Type Medium Power Transistor 2SD2391 Features Low saturation voltage. Collector-emitter voltage =60V. PC=2 W (on 40 40 0.7mm ceramic board) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 60 Collector-emitter breakdown voltage BVCEO IC=1mA 60 V Emitter-base breakdown voltage BVEBO IE=50ìA 6 V ICBO VCB=50V IEBO VEB=5V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio VCE(sat) IC=1A, IB=50mA hFE Output capacitance fT Transition frequency Cob VCE=-2V, IC=-0.5A V 0.13 120 0.1 ìA 0.1 ìA 0.35 V 270 VCE=2V, IE= -0.5A, f=100MHz 210 MHz VCB=10V, IE=0A, f=1MHz 21 pF Marking Marking DTQ www.kexin.com.cn 1