IC MOSFET SMD Type MOS Field Effect Power Transistor 2SK1284 TO-252 Unit: mm Low on-state resistance 0.40 @VGS=4V,ID=2A +0.8 0.50-0.7 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 0.127 max +0.28 1.50-0.1 Built-in G-S Gate Protection Diode +0.15 0.50-0.15 +0.2 9.70-0.2 Low Ciss Ciss=500pF TYP. +0.15 5.55-0.15 RDS(on) +0.1 2.30-0.1 +0.25 2.65-0.1 0.32 .@VGS=10V,ID=2A +0.15 1.50-0.15 RDS(on) +0.15 6.50-0.15 +0.2 5.30-0.2 3.80 Features 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V ID 3.0 A Drain current (DC) Drain current(pulse) * Power dissipation ID TC=25 12 PD TA=25 W 1.0 W Tch 150 Storage temperature Tstg -55 to +150 10ms, duty cycle A 2.0 Channel temperature * PW Unit 5% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=100V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Input capacitance Ciss Output capacitance Coss VDS=10V,ID=2A Min Typ Max 10 1.0 2.5 2.4 A A V s VGS=10V,ID=2A 0.26 0.32 VGS=4.0V,ID=2A 0.32 0.40 VDS=10V,VGS=0,f=1MHZ Unit 10 500 pF 160 pF Reverse transfer capacitance Crss 20 pF Turn-on delay time td(on) 40 ns 55 ns 500 ns 120 ns Rise time Turn-off delay time Fall time tr td(off) tf ID=2A,VGS(on)=10V,RL=25 ,VDD=50V,RG=10 www.kexin.com.cn 1